Abstract: According to one embodiment, a display device includes an insulating substrate, a first insulating layer disposed on the insulating substrate, a lower electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and including an opening overlapping the lower electrode, an organic layer including a light-emitting layer, disposed in the opening and covering the lower electrode, an upper electrode comprising a first end surface, which is an inclined surface, directly above the second insulating layer and stacked on the organic layer and an optical adjustment layer including a second end surface on an inner side with respect to the first end surface and in contact with the upper electrode.

Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.

Abstract: According to one embodiment, a display device includes a lower electrode arranged on a first insulating layer, a second insulating layer arranged on the first insulating layer, having an opening overlapping the lower electrode, and being in a lattice form, a feed line arranged on the second insulating layer, having a first line portion, a second line portion, and a third line portion being continuous with the first and second line portions and having a different width from the first and second line portions, an organic layer arranged in the opening and covering the lower electrode, and an upper electrode being in contact with the first, second and third line portions, and covering the organic layer.

Abstract: According to one embodiment, a display device includes a first area including a pixel and a second area different from the first area, wherein the pixel includes a pixel electrode, an organic material layer including a light-emitting layer, a first common electrode, and a second common electrode having transmittance higher than that of the first insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area does not comprise the first common electrode provided therein.

Abstract: A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels includes an amorphous substrate, a semi-transparent reflective layer over the amorphous substrate, a first insulating alignment layer over the semi-transparent reflective layer, a first semiconductor layer over the first insulating alignment layer, a light emitting layer over the first semiconductor layer, a second semiconductor layer over the light emitting layer, and an electrode layer over the second semiconductor layer. Each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes gallium nitride.

Abstract: A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels arranged in a matrix includes a substrate, a conductive alignment layer over the substrate, a first nitride semiconductor layer over the conductive alignment layer, a second nitride semiconductor layer comprising a light emitting layer, over the first nitride semiconductor layer, and an electrode layer over the second nitride semiconductor layer. The first nitride semiconductor layer and the second nitride semiconductor layer are provided in an island shape. The plurality of pixels arranged in a matrix commonly includes the substrate.

Abstract: According to one embodiment, a display device includes a plurality of pixels including a first pixel, a second pixel and a third pixel, each of the plurality of pixels include, an anode, an organic EL layer provided on the anode, at least one set of sidewall pairs provided to cover a side surface of the organic EL layer and a cathode provided in an opening portion of the bank and in contact with the organic EL layer. The at least one set of side wall pairs includes a first sidewall formed of aluminum oxide and a second sidewall formed of silicon nitride. The first pixel includes at least two sets of the side wall pairs, and the second pixel includes at least one set of the sidewall pair.

Abstract: A display device includes a transistor on a first region of an amorphous substrate and an LED on a second region different from the first region of the amorphous substrate. Each of the transistor and the LED includes a conductive alignment layer, a first semiconductor layer over the conductive alignment layer, and a second semiconductor layer over the first semiconductor layer. The conductive alignment layer, the first semiconductor layer, and the second semiconductor layer of the transistor are the same layer as the conductive alignment layer, the first semiconductor layer, and the second semiconductor layer of the LED, respectively. In the transistor, the first semiconductor layer is in contact with the second semiconductor layer. In the LED, a light emitting layer is provided between the first semiconductor layer and the second semiconductor layer.

Abstract: A transistor according to an embodiment of the present invention includes an amorphous substrate, a conductive alignment layer over the amorphous substrate, a heterojunction structure including a semiconductor layer and a polarization layer in contact with the semiconductor layer over the conductive alignment layer, and a gate electrode over the heterojunction structure. The heterojunction structure comprises a recessed portion in a region overlapping the gate electrode. The recessed portion may be provided in the polarization layer or the semiconductor layer.

Abstract: A display device includes a substrate, and a plurality of light-emitting elements each composed of a pixel electrode, a lower buffer layer, a light-emitting layer, an upper buffer layer, and a counter electrode stacked in order on the substrate. The lower buffer layer comprises a first hole transport layer, a second hole transport layer, and a third hole transport layer stacked in order on the pixel electrode, and refractive index of the second hole transport layer is higher than refractive index of the first hole transport layer and refractive index of the third hole transport layer.

Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.

Abstract: A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.

Abstract: A semiconductor device using a gallium nitride layer has an amorphous glass substrate, an oriented insulating layer arranged on the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged on the oriented insulating layer and in contact with the oriented insulating layer, the first gallium nitride layer being a first conductivity type, a gate electrode opposed to the first gallium nitride layer, and a gate insulating layer between the first gallium nitride layer and the gate electrode. The oriented insulating layer may have a plane with 6-fold rotational symmetry.

Abstract: According to one embodiment, a display device includes a plurality of pixels including at least a first pixel and a second pixel, each of the plurality of pixels comprising an anode including a reflective electrode and a transparent electrode, an organic EL layer provided on the anode, wherein a first anode of the first pixel includes a first reflective electrode and a first transparent electrode, a second anode of the second pixel includes a second reflective electrode and a second transparent electrode, an end portion of the first reflective electrode and an end portion of the first transparent electrode coincide with each other, and the second transparent electrode covers the second reflective electrode.

Abstract: According to one embodiment, a display device includes a plurality of pixels and a bank provided between each adjacent pair of the plurality of pixels, and each of the plurality of pixels includes, on a base, a cathode, an organic EL layer provided on the cathode, a protective layer provided to cover a side surface of the organic EL layer, and an anode provided on the protective layer and in an aperture of the bank, so as to be in contact with the organic EL layer.

Abstract: According to one embodiment, a display device includes an anode, a cathode opposing the anode and an organic layer located between the anode and the cathode, and the organic layer includes a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer, and at least one of the electron blocking layer and the hole blocking layer has a resistance of 10% or more and 30% or less in a thickness direction when a total resistance between the anode and the cathode is set to 100%.

Abstract: A semiconductor device, which can provide semiconductor device using gallium nitride layer, includes an amorphous glass substrate, an oriented metal layer arranged above the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged above the oriented metal layer and having a first conductive type, a second gallium nitride layer arranged above the first gallium nitride layer, connected to the first gallium nitride layer, having higher conductive property than the first gallium nitride layer, including a source-side second gallium nitride layer and a drain-side second gallium nitride layer facing each other, and having a second conductive type, a gate electrode facing the first gallium nitride layer, and a gate insulating layer between the first gallium nitride layer and the gate electrode, wherein the gate insulating layer is positioned between the source-side second gallium nitride layer and the drain-side second gallium nitride layer in a cross-sectional view.

Abstract: According to one embodiment, a display device comprises a first area including a pixel and a second area different from the first area, wherein the pixel comprises a pixel electrode, an organic material layer including a light-emitting layer, a common electrode, a first insulating layer, a second insulating layer having a refractive index lower than that of the first insulating layer, and a third insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area comprises the first insulating layer provided therein, the second area does not comprise the second insulating layer.

Abstract: According to one embodiment, a display device includes a first lower electrode, a second lower electrode and a third lower electrode, a rib including apertures, a first organic layer provided on the first lower electrode, a second organic layer provided on the second lower electrode, a third organic layer provided on the third lower electrode, and an upper electrode. At least one of the first lower electrode, the second lower electrode and the third lower electrode includes a flat portion and a plurality of inclined portions which incline relative to the flat portion in the aperture. The inclined portions are arrayed in matrix in first and second directions which intersect each other in plan view.

Abstract: A display device includes: light-emitting regions different in luminescent colors and including luminescent layers separated for each of the luminescent colors; a low-threshold layer lower in threshold voltage than any one of the luminescent layers included in a pair of different-color light-emitting regions included in the light-emitting regions, different in the luminescent colors, and adjacent to each other; a continuous layer under the luminescent layers and the low-threshold layer, including first areas and a second area continuously, the first areas being in contact with the respective light-emitting regions, the second area being in contact with the low-threshold layer; pixel electrodes under the continuous layer, overlapping with the respective light-emitting regions; and a counter electrode over the luminescent layers and the low-threshold layer, being opposed to the pixel electrodes. The low-threshold layer is between the pair of different-color light-emitting regions.