Abstract: To provide a gallium oxide-based semiconductor with its bandgap being sufficiently reduced, and a manufacturing method thereof. A gallium oxide-based semiconductor containing a mixed crystal having a composition represented by (Ga(1-x)Fex)2yO3, wherein 0.10?x?0.40 and 0.85?y?1.2, wherein the mixed crystal has a beta-gallia structure, is provided. Also, a method for manufacturing the gallium oxide-based semiconductor, including depositing a mixed crystal having a composition represented by (Ga(1-x)Fex)2yO3, wherein 0.10?x?0.40 and 0.85?y?1.2 on a substrate surface by a pulsed laser deposition method, wherein denoting the temperature of the substrate as T° C., x and T satisfy the relationship represented by 500x+800?T<1,000, is provided.

Abstract: There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material is set to 650° C. to 1,000° C., and the laser intensity is set to 1.0 J/cm2 to 10.0 J/cm2. The bismuth-containing gallium oxide-based semiconductor film of the present disclosure has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to the total of the numbers of atoms of bismuth and gallium and has a ?-gallia structure. The bismuth-containing gallium oxide-based semiconductor component of the present disclosure has a base material and the bismuth-containing gallium oxide-based semiconductor film that is laminated on the base material.

Abstract: There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material is set to 650° C. to 1,000° C., and the laser intensity is set to 1.0 J/cm2 to 10.0 J/cm2. The bismuth-containing gallium oxide-based semiconductor film of the present disclosure has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to the total of the numbers of atoms of bismuth and gallium and has a ?-gallia structure. The bismuth-containing gallium oxide-based semiconductor component of the present disclosure has a base material and the bismuth-containing gallium oxide-based semiconductor film that is laminated on the base material.

Abstract: To provide a gallium oxide-based semiconductor with its bandgap being sufficiently reduced, and a manufacturing method thereof. A gallium oxide-based semiconductor containing a mixed crystal having a composition represented by (Ga(1-x)Fex)2yO3, wherein 0.10?x?0.40 and 0.85?y?1.2, wherein the mixed crystal has a beta-gallia structure, is provided. Also, a method for manufacturing the gallium oxide-based semiconductor, including depositing a mixed crystal having a composition represented by (Ga(1-x)Fex)2yO3, wherein 0.10?x?0.40 and 0.85?y?1.2 on a substrate surface by a pulsed laser deposition method, wherein denoting the temperature of the substrate as PC, x and T satisfy the relationship represented by 500x+800?T<1,000, is provided.

Abstract: The present disclosure provides a method for producing a semiconductor element that can lower the potential risk of malfunction. The production method of the disclosure is a method for producing a semiconductor element which includes providing a semiconductor element precursor, the precursor having a metal electrode layer formed on the surface of a gallium oxide-based single crystal semiconductor layer and a dopant doped in at least part of an exposed portion on the surface of the gallium oxide-based single crystal semiconductor layer where the metal electrode layer is not layered, and annealing treatment of the semiconductor element precursor whereby the dopant is diffused to a portion of the gallium oxide-based single crystal semiconductor layer that are overlapping with the metal electrode layer in the layering direction, to form a Schottky junction between the gallium oxide-based single crystal semiconductor layer and the metal electrode layer.

Abstract: The present disclosure provides a method for producing a semiconductor element that can lower the potential risk of malfunction. The production method of the disclosure is a method for producing a semiconductor element which includes providing a semiconductor element precursor, the precursor having a metal electrode layer formed on the surface of a gallium oxide-based single crystal semiconductor layer and a dopant doped in at least part of an exposed portion on the surface of the gallium oxide-based single crystal semiconductor layer where the metal electrode layer is not layered, and annealing treatment of the semiconductor element precursor whereby the dopant is diffused to a portion of the gallium oxide-based single crystal semiconductor layer that are overlapping with the metal electrode layer in the layering direction, to form a Schottky junction between the gallium oxide-based single crystal semiconductor layer and the metal electrode layer.