Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device.

Abstract: A step substrate coating composition for efficiently forming a coating that is capable of filling and flattening a pattern. A step substrate coating composition comprising a compound (A) of a main agent, a crosslinking agent, and a solvent, the compound (A) including a partial structure expressed by formula (A-1) (where the broken line represents bonding with an aromatic ring, the aromatic ring forming a polymer skeleton or a monomer, and n represents an integer of 1-4).

Abstract: A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) ??Formula (1) wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R1 and R2 are optionally bonded together to form a ring structure; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of

Abstract: A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCH2CH(OH)CH2O— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.

Abstract: A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R1, R2, R3 and R4 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that R2 is present only in cases where X is a nitrogen atom, and R4 is present only in cases where Y is a nitrogen atom.

Abstract: A composition having a multi-level substrate coating composition for forming a coating film having a filling onto a pattern and planarization, wherein the composition includes a compound (A) serving as a main agent, and a solvent, wherein the compound (A) forms the following Formula (A-1), (A-2) and (A-3); In Formulas (A-1), (A-2) and (A-3), a broken line is a bond to the aromatic ring; the aromatic ring forming a polymer skeleton or forming a monomer; and n is an integer of 1 or 2; A chain line is a bond to a carbon chain, alicyclic carbon ring, or aromatic ring forming a polymer skeleton; Q is a single bond, or an organic group having an ether bond, an ester bond, a urethane bond, a C1-3 alkylene bond, or an amide bond; m is 1; and Formula (A-3) does not include Formula (A-1), and the composition is cured photoirradiation or heating.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A resin composition which is for an insulating film and from which a cured product having a further reduced dielectric constant and dielectric loss tangent is obtained; a photosensitive resin composition; a method for producing a cured relief pattern using the photosensitive resin composition; and a semiconductor device with the cured relief pattern. This resin composition for an insulating film includes: a polyimide precursor; and a compound which is a polyimide precursor containing a polyamic acid ester, a thermal imidization accelerator, and a solvent, wherein the thermal imidization accelerator has a carboxyl group and an amino group or imino group which is deprotected by heat and exhibits basicity, and does not accelerate the imidization of the polyimide precursor before the protective group is released. Furthermore, a photosensitive resin composition which is for an insulating film and includes a photopolymerization initiator.

Abstract: Provided is a method for producing a pigment, in particular, a metal phthalocyanine, in high yield and in a green process. The method has (1) a step of obtaining a solution mixture by mixing at least one type of compound serving as a raw material for a pigment with a solvent, and (2) a step of obtaining the pigment by reacting the compound while holding the solution mixture at not less than a temperature where a subcritical state or a supercritical state of the solvent occurs.

Abstract: Provided is a method for producing a pigment, in particular, a metal phthalocyanine, in high yield and in a green process. The method has (1) a step of obtaining a solution mixture by mixing at least one type of compound serving as a raw material for a pigment with a solvent, and (2) a step of obtaining the pigment by reacting the compound while holding the solution mixture at not less than a temperature where a subcritical state or a supercritical state of the solvent occurs.