Abstract: A control device controls movement of a valve body of a valve device and estimates a flow rate of the valve device; determines, on the basis of an input target flow rate value and the flow rate estimate, whether or not the flow of an operating fluid in the valve device is in a transient flow state; calculates an opening command on the basis of the target flow rate value and an upstream-downstream pressure difference of the valve device; and controls the movement of the valve body. When the control device determines that the flow is not in the transient flow state, it controls the movement of the valve body on the basis of the opening command, and when the control determines that the flow is in the transient flow state, it controls the movement of the valve body on the basis of the target flow rate value.

Abstract: A regeneration device includes: a regeneration valve that controls the flow rate of an operating fluid being drained from one port of a cylinder; a non-return valve that allows a regenerative flow of the operating fluid from the regeneration valve to the other port of the cylinder and blocks an opposite flow of the operating fluid; and an exhaust valve that controls the flow rate of the operating fluid output from the regeneration valve being drained to a tank. The regeneration valve controls the flow rate independently of the exhaust valve.

Abstract: This hydraulic drive system includes: first and second circuit systems; first and second hydraulic pumps; a merge valve that opens and closes a merge passage connecting the hydraulic pumps; an operation device that outputs an operation command corresponding to an amount of operation specifying an amount of actuation of first and second hydraulic actuators; and a control device that controls the merge valve according to the operation command from the operation device. The first circuit system includes: a first meter-in control valve that controls a meter-in flow rate of the working fluid that flows to the first hydraulic actuator; and a first meter-out control valve that controls a meter-out flow rate of the working fluid that is drained from the first hydraulic actuator into a tank. The control device controls an opening degree of the first meter-in control valve and an opening degree of the first meter-out control valve.

Abstract: This hydraulic drive system includes: a hydraulic pump capable of changing a discharge flow rate of a working fluid; a meter-in control valve that controls a meter-in flow rate of the working fluid flowing from the hydraulic pump to a hydraulic actuator; a meter-out control valve that is provided separately from the meter-in control valve and controls a meter-out flow rate of the working fluid being drained from the hydraulic actuator into a tank; an operation device that outputs an operation command; a first pressure sensor that detects a drainage pressure of the hydraulic actuator; and a control device that sets a target meter-out flow rate according to the operation command from the operation device and controls an opening degree of the meter-out control valve on the basis of the drainage pressure detected by the first pressure sensor and the target meter-out flow rate.

Abstract: This hydraulic drive system includes: a hydraulic pump that supplies a working fluid to a hydraulic actuator; a meter-in control valve that controls a flow rate of the working fluid flowing from the hydraulic pump to the hydraulic actuator; a meter-out control valve that controls a flow rate of the working fluid being drained from the hydraulic actuator into a tank; and a regeneration valve that supplies, to the hydraulic actuator, the working fluid drained from the hydraulic actuator. The meter-out control valve is connected to the hydraulic actuator in parallel with the regeneration valve.

Abstract: A control device controls movement of a valve body of a valve device and estimates a flow rate of the valve device; determines, on the basis of an input target flow rate value and the flow rate estimate, whether or not the flow of an operating fluid in the valve device is in a transient flow state; calculates an opening command on the basis of the target flow rate value and an upstream-downstream pressure difference of the valve device; and controls the movement of the valve body. When the control device determines that the flow is not in the transient flow state, it controls the movement of the valve body on the basis of the opening command, and when the control determines that the flow is in the transient flow state, it controls the movement of the valve body on the basis of the target flow rate value.

Abstract: This control device controls movement of a valve body of a valve device included in a hydraulic system and includes: a stroke command calculator that calculates a stroke command for the valve body on the basis of an opening command that is input to the stroke command calculator; an observer that estimates, on the basis of the stroke command, a dynamic deviation of a stroke of the valve body that corresponds to the stroke command; and a flow force estimator that estimates, on the basis of the stroke command and the dynamic deviation, a flow force acting on the valve body. The stroke command calculator calculates the stroke command on the basis of the flow force in addition to the opening command.

Abstract: A regeneration device includes: a regeneration valve that controls the flow rate of an operating fluid being drained from one port of a cylinder; a non-return valve that allows a regenerative flow of the operating fluid from the regeneration valve to the other port of the cylinder and blocks an opposite flow of the operating fluid; and an exhaust valve that controls the flow rate of the operating fluid output from the regeneration valve being drained to a tank. The regeneration valve controls the flow rate independently of the exhaust valve.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

Abstract: A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second

Abstract: A solar cell includes: first conductivity-type layers and second conductivity-type layers each provided on a rear surface of a semiconductor substrate; first electrodes provided on the first conductivity-type layers; and second electrodes provided on the second conductivity-type layers. The first electrodes and the second electrodes are spaced apart from each other, and the first electrodes include a plurality of regions isolated from one another by the second electrodes disposed therebetween. Each of the plurality of regions of the first electrodes includes a non-mounting electrode section and a wiring-mounting electrode section having a larger electrode height than the non-connection electrode section. In two adjacent first electrode regions, an imaginary line connecting the top of the wiring-mounting electrode section of one of the regions and the top of the wiring-mounting electrode section of the other region does not cross the second electrode disposed between the two regions.

Abstract: A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second

Abstract: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region.

Abstract: An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.

Abstract: A solar cell includes a rectangular-shaped semiconductor substrate having a first principal surface and a second principal surface, and a metal electrode. The second principal surface includes a plurality of band-shaped first conductivity-type regions that comprise a first conductivity-type semiconductor layer and a plurality of band-shaped second conductivity-type regions that comprise a second conductivity-type semiconductor layer. The metal electrode may be disposed on the second principal surface, and no metal electrode may be provided on the first principal surface. The second conductivity-type semiconductor layer may have a conductivity-type different from that of the first conductivity-type semiconductor layer. The semiconductor substrate may include a first direction end portion region at both end portions of the semiconductor substrate in a first direction, and a first direction central region is present between the two first direction end portion regions.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: A solar cell includes a conductive crystalline silicon substrate, a first conductive silicon layer, a second conductive silicon layer, a first intrinsic silicon layer, and a second intrinsic silicon layer. The first conductive silicon layer and the second conductive silicon layer are disposed on one principal surface of the conductive crystalline silicon substrate and are electrically insulated from each other. The second conductive silicon layer includes a first portion and a second portion, where the first portion is separated from the conductive crystalline silicon substrate by the first intrinsic silicon layer and the first conductive silicon layer, and where the second portion is separated from the conductive crystalline silicon substrate by the second intrinsic silicon layer. The first intrinsic silicon layer has a greater thickness than the second intrinsic silicon layer.