Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type (or p-type) conductivity, and crystal orientations of the semiconductor material in the direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the first region in the first direction in an upper surface neighboring region including the upper surface is larger (or smaller) than an interatomic distance of the third region in the first direction in an upper surface neighboring region including the upper surface.

Abstract: A semiconductor element includes a semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are separated from each other on the semiconductor layer. The semiconductor layer has a first semiconductor region and a second semiconductor region. The first electrode and the second electrode are provided on the first semiconductor region. The second semiconductor region is separated from the first electrode and the second electrode. The second semiconductor region is provided to be in contact with at least a part of an end surface of the first semiconductor region. The first semiconductor region has n-type/p-type conductivity. The second semiconductor region has p-type/n-type conductivity.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The average resistivity of a sixth region composed of a first region, a second region, and a fourth region is higher than the average resistivity of a seventh region composed of the second region, a third region, and a fifth region.

Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type conductivity, and crystal orientations of the semiconductor material in the first direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the third region in an upper surface neighboring region including the upper surface is larger than an interatomic distance of the first region in the upper surface neighboring region.

Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type (or p-type) conductivity, and crystal orientations of the semiconductor material in the direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the first region in the first direction in an upper surface neighboring region including the upper surface is larger (or smaller) than an interatomic distance of the third region in the first direction in an upper surface neighboring region including the upper surface.

Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type conductivity, and crystal orientations of the semiconductor material in the direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the third region in an upper surface neighboring region is larger than an interatomic distance of the third region in a lower surface neighboring region.

Abstract: A semiconductor element includes a semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are separated from each other on the semiconductor layer. The semiconductor layer has a first semiconductor region and a second semiconductor region. The first electrode and the second electrode are provided on the first semiconductor region. The second semiconductor region is separated from the first electrode and the second electrode. The second semiconductor region is provided to be in contact with at least a part of an end surface of the first semiconductor region. The first semiconductor region has n-type/p-type conductivity. The second semiconductor region has p-type/n-type conductivity.

Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type conductivity, and crystal orientations of the semiconductor material in the direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the third region in an upper surface neighboring region is larger than an interatomic distance of the third region in a lower surface neighboring region.

Abstract: The magnetoresistance effect element includes a semiconductor layer, a first ferromagnetic layer and a second ferromagnetic layer. The semiconductor layer has a first region, a second region, and a third region. The first ferromagnetic layer is provided on the first region, the second ferromagnetic layer is provided on the second region, and the third region is sandwiched between the first region and the second region in the first direction. The third region has n-type conductivity, and crystal orientations of the semiconductor material in the first direction are substantially the same in the first region, the second region, and the third region. An interatomic distance of the third region in an upper surface neighboring region including the upper surface is larger than an interatomic distance of the first region in the upper surface neighboring region.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The average resistivity of a sixth region composed of a first region, a second region, and a fourth region is higher than the average resistivity of a seventh region composed of the second region, a third region, and a fifth region.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The average resistivity of a sixth region composed of a first region, a second region, and a fourth region is higher than the average resistivity of a seventh region composed of the second region, a third region, and a fifth region.

Abstract: A system for migrating a virtual machine includes: a first device; and a second device. The first device notifies the second device of failure information indicating that data transported to the second device includes an error originated from the first device, when the error is detected from a storage area in the first device. The second device writes a second identifier, whose value is different from that of a first identifier, into a memory of the second device while associating the second identifier with a second address, the second address being to serve as a copy destination of data indicated by the failure information, wherein the first identifier indicates that data in the second address includes an error originated from the second device, and the second identifier serves as an identifier indicating that data in the second address includes an error originated from the first device.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The effective cross-sectional area of a sixth region according to a plane perpendicularly intersecting a spin-polarized carrier transport path in the sixth region is smaller than the effective cross-sectional area of a seventh region according to a plane perpendicularly intersecting a voltage detection path in the seventh region.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The effective cross-sectional area of a sixth region according to a plane perpendicularly intersecting a spin-polarized carrier transport path in the sixth region is smaller than the effective cross-sectional area of a seventh region according to a plane perpendicularly intersecting a voltage detection path in the seventh region.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The average resistivity of a sixth region composed of a first region, a second region, and a fourth region is higher than the average resistivity of a seventh region composed of the second region, a third region, and a fifth region.

Abstract: Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer; a first ferromagnetic layer disposed on the semiconductor channel layer; a second ferromagnetic layer disposed away from the first ferromagnetic layer; and a non-magnetic first reference electrode disposed away from the first ferromagnetic layer and the second ferromagnetic layer, wherein current is input from the second ferromagnetic layer to the first ferromagnetic layer through the semiconductor channel layer, a voltage between the second ferromagnetic layer and the first reference electrode is output.

Abstract: A system for migrating a virtual machine includes: a first device; and a second device. The first device notifies the second device of failure information indicating that data transported to the second device includes an error originated from the first device, when the error is detected from a storage area in the first device. The second device writes a second identifier, whose value is different from that of a first identifier, into a memory of the second device while associating the second identifier with a second address, the second address being to serve as a copy destination of data indicated by the failure information, wherein the first identifier indicates that data in the second address includes an error originated from the second device, and the second identifier serves as an identifier indicating that data in the second address includes an error originated from the first device.

Abstract: Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer; a first ferromagnetic layer disposed on the semiconductor channel layer; a second ferromagnetic layer disposed away from the first ferromagnetic layer; and a non-magnetic first reference electrode disposed away from the first ferromagnetic layer and the second ferromagnetic layer, wherein current is input from the second ferromagnetic layer to the first ferromagnetic layer through the semiconductor channel layer, a voltage between the second ferromagnetic layer and the first reference electrode is output.

Abstract: A processor includes: a primary cache memory; an instruction control unit that issues a store request to the primary cache memory; a pipeline processing unit that, upon receiving the store request, writes data to the primary cache memory; a buffer unit that obtains an address output to the primary cache memory from the pipeline processing unit during an output period of the store request regarding certain data to hold the obtained address in an entry, and when the output period ends, issues a write-back request for writing the data indicated by the address held in the entry to a memory; and a secondary cache memory that, upon receiving the write-back request from the buffer unit, writes the data of the primary cache memory to the memory, the certain data is quickly written back to the memory from the primary cache memory.

Abstract: To provide a spin injection electrode structure capable of injecting spins into a semiconductor with high efficiency and a spin transport element having the same. Aluminum oxide containing a ?-phase is used as a material making up a tunnel barrier layer. A protective film is formed outside the tunnel barrier layer. This allows a good spin injection electrode structure with few defects in a crystal or at a junction interface to be obtained, enables spins to be injected into a semiconductor with high efficiency, and allows a spin transport element having high output characteristics at room temperature to be provided.