Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A turbine includes a turbine wheel, a housing having a flow path for a gas, a variable geometry device to guide the gas from the flow path to the turbine wheel, and a biasing member. The variable geometry device includes one or more nozzle vane member, each having a nozzle vane, a nozzle shaft and a nozzle link plate. The biasing member is in contact with the nozzle link plate of the nozzle vane member, to urge the nozzle vane member against a contact surface of the turbine.

Abstract: A variable capacity turbocharger includes a turbine impeller, a gas inlet passage fluidly coupled to the turbine impeller, a nozzle vane located in the gas inlet passage, a drive assembly that rotates the nozzle vane, a drive chamber accommodating the drive assembly and including a region configured to store liquid in the drive chamber, and a liquid passage fluidly coupled with the drive chamber and configured to discharge the liquid from the drive chamber. A surface of the liquid passage has a greater surface roughness than the region of the drive chamber.