Patents by Inventor Hayato Yamawaki

Hayato Yamawaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11969827
    Abstract: A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a holder moving mechanism configured to move the holder in a horizontal direction; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers in a spiral shape; a modifying device moving mechanism configured to move the modifying device in the horizontal direction; and a controller configured to control an operation of forming the internal modification layers. The controller controls operations of the holder and the modifying device such that a spiral processing movement according to the formation of the internal modification layers and an eccentricity follow-up movement of correcting an eccentric amount between the holder and the processing target object held by the holder are shared by the holder and the modifying device.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: April 30, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hayato Tanoue, Yohei Yamashita, Yohei Yamawaki, Hirotoshi Mori
  • Publication number: 20240138183
    Abstract: A method for manufacturing a novel display apparatus is provided. The method includes a first step of forming a first electrode, a second electrode, and a first gap over an insulating film, a second step of forming a first film over the second electrode; a third step of forming a first layer overlapping with the first electrode, a fourth step of removing the first film by an etching method to form a first unit overlapping with the first electrode, a fifth step of removing a surface of the second electrode, a sixth step of forming a second film over the first layer and the second electrode, a seventh step of forming a second layer overlapping with the second electrode, and an eighth step of removing the second film by an etching method using the second layer to form a second unit overlapping with the second electrode and a second gap.
    Type: Application
    Filed: September 27, 2023
    Publication date: April 25, 2024
    Inventors: Yasutaka NAKAZAWA, Takayuki OHIDE, Naoto GOTO, Hiroki ADACHI, Satoru IDOJIRI, Hayato YAMAWAKI, Kenichi OKAZAKI, Sachiko KAWAKAMI
  • Publication number: 20190115553
    Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 18, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi SEO, Takeyoshi WATABE, Rina NAKAMURA, Harue OSAKA, Ayumi SATO, Kunihiko SUZUKI, Hayato YAMAWAKI
  • Patent number: 10153449
    Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: December 11, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Takeyoshi Watabe, Rina Nakamura, Harue Osaka, Ayumi Sato, Kunihiko Suzuki, Hayato Yamawaki
  • Patent number: 10074822
    Abstract: To provide a novel light-emitting element or a highly reliable light-emitting element. To provide a light-emitting device, a display device, an electronic device, and a lighting device each of which can be manufactured at a low cost. To provide a light-emitting element including an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a light-emitting layer and an electron injection transport layer between the light-emitting layer and the cathode, and the amount of a halogen detected from a material forming the electron injection transport layer is less than or equal to 30 ppm.
    Type: Grant
    Filed: October 26, 2015
    Date of Patent: September 11, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Tsunenori Suzuki, Takeyoshi Watabe, Kunihiko Suzuki, Toshiki Hamada, Rina Nakamura, Hayato Yamawaki, Ayumi Sato, Harue Osaka
  • Publication number: 20170294594
    Abstract: A dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a novel method of synthesizing the dibenzo[f,h]quinoxaline derivative in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which the dibenzo[f,h]quinoxaline derivative is used as an EL material is provided. In the synthesis method, a 2-(chloroaryl)dibenzo[f,h]quinoxaline derivative is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.
    Type: Application
    Filed: June 27, 2017
    Publication date: October 12, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko INOUE, Tomohiro KUBOTA, Satoshi SEO, Hayato YAMAWAKI, Yasushi KITANO
  • Patent number: 9695158
    Abstract: A composition comprising a dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a method of synthesizing dibenzo[f,h]quinoxaline in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which dibenzo[f,h]quinoxaline is used as an EL material is provided. In the synthesis method, 2-(chloroaryl)dibenzo[f,h]quinoxaline is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: July 4, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Tomohiro Kubota, Satoshi Seo, Hayato Yamawaki, Yasushi Kitano
  • Publication number: 20160118614
    Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.
    Type: Application
    Filed: October 14, 2015
    Publication date: April 28, 2016
    Inventors: Satoshi SEO, Takeyoshi WATABE, Rina NAKAMURA, Harue OSAKA, Ayumi SATO, Kunihiko SUZUKI, Hayato YAMAWAKI
  • Publication number: 20160118615
    Abstract: To provide a novel light-emitting element or a highly reliable light-emitting element. To provide a light-emitting device, a display device, an electronic device, and a lighting device each of which can be manufactured at a low cost. To provide a light-emitting element including an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a light-emitting layer and an electron injection transport layer between the light-emitting layer and the cathode, and the amount of a halogen detected from a material forming the electron injection transport layer is less than or equal to 30 ppm.
    Type: Application
    Filed: October 26, 2015
    Publication date: April 28, 2016
    Inventors: Satoshi SEO, Tsunenori SUZUKI, Takeyoshi WATABE, Kunihiko SUZUKI, Toshiki HAMADA, Rina NAKAMURA, Hayato YAMAWAKI, Ayumi SATO, Harue OSAKA
  • Publication number: 20150080574
    Abstract: A dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a novel method of synthesizing the dibenzo[f,h]quinoxaline derivative in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which the dibenzo[f,h]quinoxaline derivative is used as an EL material is provided. In the synthesis method, a 2-(chloroaryl)dibenzo[f,h]quinoxaline derivative is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 19, 2015
    Inventors: Hideko Inoue, Tomohiro Kubota, Satoshi Seo, Hayato Yamawaki, Yasushi Kitano