Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: The present invention discloses an image decoding method, the method including generating a candidate list including motion information derived from a spatial neighboring block and a temporal neighboring block adjacent to a current block; deriving motion information of the current block using the candidate list; generating a prediction block of the current block using the derived motion information; and updating the derived motion information in a motion information list, wherein the generating of the candidate list is performed in such a manner as to include at least one information of the motion information included in the updated motion information list in a block decoded before the current block.

Abstract: A method of characterizing an error in a NAND flash memory, and an error estimation method and a storage system control method using the same are provided. The method of characterizing an error in a NAND flash memory characterizes an error source of the NAND flash memory using a center distance between one pattern and another pattern among a plurality of patterns in a threshold voltage distribution of NAND flash memory cells as a parameter.

Abstract: The present invention relates to an anode active material, a nonaqueous lithium secondary battery comprising the same, and a preparation method therefor, and the purpose of the present invention is to improve high-rate charging characteristics without deterioration of charging and discharging efficiency and lifetime characteristics when applying an amorphous carbon coating layer as the anode active material of the nonaqueous lithium secondary battery, wherein the amorphous carbon coating layer comprising MoPx particles composed of MoP and MoP2 is formed on the surface of a carbon-based material, thereby reducing resistance when intercalating lithium ions into the surface of the carbon-based material, and improving reactivity and structural stability of the surface. The anode active material according to the present invention comprises a carbon-based material, and an amorphous carbon coating layer comprising MoPx particles composed of MoP and MoP2 formed on the surface of the carbon-based material.

Abstract: The present invention relates to an anode active material, a nonaqueous lithium secondary battery comprising the same, and a preparation method therefor, and the purpose of the present invention is to improve high-rate charging characteristics without deterioration of charging and discharging efficiency and lifetime characteristics when applying an amorphous carbon coating layer as the anode active material of the nonaqueous lithium secondary battery, wherein the amorphous carbon coating layer comprising MoPx particles composed of MoP and MoP2 is formed on the surface of a carbon-based material, thereby reducing resistance when intercalating lithium ions into the surface of the carbon-based material, and improving reactivity and structural stability of the surface. The anode active material according to the present invention comprises a carbon-based material, and an amorphous carbon coating layer comprising MoPx particles composed of MoP and MoP2 formed on the surface of the carbon-based material.