Abstract: The power module device is equipped with a metallic substrate composed of a flat section and a recessed section, and a circuit board which is rested over the recessed section of the metallic substrate. The metallic substrate and the circuit board constitute a package. In the recessed section, the power element is mounted on the bottom surface section and the control element is mounted on the bottom surface of the circuit board. Then, the power element and the control element are electrically connected via a wiring pattern or the like provided on the metallic substrate.

Abstract: A semiconductor device assembly includes a lead frame having opposed first and second surfaces, a die pad, and a plurality of inner leads, each of two inner leads having an integral projection; a semiconductor element mounted on the die pad; a resistance wire welded to the projections; and metal wires electrically connecting said the semiconductor element with the inner leads.

Abstract: A power module having a reduced cost and a smaller size is achieved by utilizing a reduced number of MOS-FET devices owing to improved heat radiation, smaller substrates owing to, a higher degree of freedom of wiring, and a reduced quantity of silicone get required. Heat generating elements including a MOS-FET and a resistor are soldered to a metallic heat radiating plate via a copper heat sink, alumina insulating plate, or the like. A circuit pattern for the heat generating elements is formed on a metallic substrate provided above the metallic heat radiating plate. Openings are made in the metallic substrate at the points located above the heat generating elements and the heat generating elements are connected to the metallic substrate with aluminum wires through the openings. Further, rings surrounding the heat generating elements are provided between the metallic heat radiating plate and the metallic substrate, a protective material being charged in the rings.

Abstract: A lead for achieving solder joining with great vibration strength includes an upper lead portion having a clip and a lower lead portion having a thin tip for insertion into an electrode in a lower substrate and an oblong through hole in the body of the lower lead portion for inducing capillarity of soldering flux.

Abstract: A resin sealed semiconductor device includes a current-detecting resistance for detecting current flowing in a semiconductor element that is a metallic resistance having a coefficient of thermal expansion almost equal to that of the lead frame. Compared to a conventional ceramic chip resistance, its coefficient of thermal expansion differs less from that of the lead frame, thereby preventing deterioration caused by heat stress.

Abstract: There is disclosed a semiconductor device wherein an insulating layer (10) is formed on the reverse face of a lead frame (1), and a heat sink (200) is formed on the reverse face of the insulating layer (10). Transfer molding is carried out such that the reverse face of the heat sink (200) is exposed. The lead frame (1) is insulated from the heat sink (200) by the insulating layer (10). When the semiconductor device is mounted on a conductive external mounting base plate, it is unnecessary to insulate the semiconductor device from the external mounting base plate. This simplifies the process of mounting the semiconductor device on the external mounting base plate.

Abstract: A hybrid integrated circuit device includes first and second circuit boards having heat emitting semiconductor devices mounted on each circuit board, the circuit boards being respectively attached to opposite sides of a heat radiating plate with an adhesive and extending in opposite directions beyond the heat radiating plate. The respective edges of the circuit boards extending beyond the heat radiating plate are grasped by clip leads for supporting the heat radiating plate and the two circuit boards on a main circuit board. Further, these clip leads electrically connect the semiconductor devices to external circuits.