Patents by Inventor Haznita Abd Karim

Haznita Abd Karim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation
    Patent number: 6517235
    Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: February 11, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Zhong Yun Zhu, Rajneesh Jaiswal, Haznita Abd Karim, Bei Chao Zhang, Johnny Cham, Ravi Sankar Yelamanchi, Chee Kong Leong
  • USING REFRACTORY METAL SILICIDATION PHASE TRANSITION TEMPERATURE POINTS TO CONTROL AND/OR CALIBRATE RTP LOW TEMPERATURE OPERATION
    Publication number: 20020191668
    Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.
    Type: Application
    Filed: May 31, 2001
    Publication date: December 19, 2002
    Inventors: Zhong-Yun Zhu, Rajneesh Jaiswal, Haznita Abd Karim, Bei Chao Zhang, Johnny Cham, Ravi Sankar Yelamanchi, Chee Kong Leong