Patents by Inventor He FAN

He FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming semiconductor structure and overlay error estimation
    Patent number: 11119416
    Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: September 14, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Yuan Sun, Yen-Liang Chen, He Fan, Yen-Hung Chen, Kai Lin
  • METHOD FOR FORMING SEMICONDUCTOR STRUCTURE AND OVERLAY ERROR ESTIMATION
    Publication number: 20200057388
    Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.
    Type: Application
    Filed: June 12, 2019
    Publication date: February 20, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Yuan SUN, Yen-Liang CHEN, He FAN, Yen-Hung CHEN, Kai LIN