Abstract: A method using directed self-assembly of block copolymers (BCPs) for making an imprint template has the required patterns for both the features in the template's active area and the optically-detectable alignment marks in the template's non-active area. A chemical contrast pattern defined by a lithographic technique forms patterns of lines in both the active area and non-active area, as well as patterns of featureless gap regions in the non-active area. The pattern of lines has the BCP components aligned as lamellae perpendicular to the substrate, while the pattern of featureless gap regions has the BCP components aligned as lamellae parallel to the substrate. The patterns of lines and featureless gap regions in the non-active area define the optically detectable alignment marks. One of the BCP components is removed, leaving the other BCP component as an etch mask to fabricate the imprint template.

Abstract: A nanoimprinting master template is an ultraviolet-transparent substrate, like fused quartz, with a metallic layer having silicon dioxide pillars extending from the metallic layer and an optional silicon dioxide film on the pillars and on regions of the metallic layer between the pillars. The pillars have a generally rectangular shape and are arranged as a pattern of radial spokes and concentric rings.

Abstract: In directed self-assembly (DSA) of a block copolymer (BCP), a patterned sublayer on a substrate serves as a guiding chemical prepattern on which BCPs form more uniform and/or denser patterns. A layer of a blend of a BCP and functional homopolymers, referred to as inks, is deposited on the patterned sublayer and annealed to change the initial chemical prepattern to a 1:1-like chemical pattern that is more favorable to DSA. After annealing, the inks selectively distribute into blocks by DSA, and part of the inks graft on the substrate underneath the blocks. The BCP blend layer is then rinsed away, leaving the grafted inks. A second layer of BCP is then deposited and annealed as a second DSA step to form alternating lines of the BCP components. One of the BCP components is removed, leaving lines of the other BCP component as a mask for patterning the substrate.

Abstract: A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.

Abstract: In directed self-assembly (DSA) of a block copolymer (BCP), a patterned sublayer on a substrate serves as a guiding chemical prepattern on which BCPs form more uniform and/or denser patterns. A layer of a blend of a BCP and functional homopolymers, referred to as inks, is deposited on the patterned sublayer and annealed to change the initial chemical prepattern to a 1:1-like chemical pattern that is more favorable to DSA. After annealing, the inks selectively distribute into blocks by DSA, and part of the inks graft on the substrate underneath the blocks. The BCP blend layer is then rinsed away, leaving the grafted inks. A second layer of BCP is then deposited and annealed as a second DSA step to form alternating lines of the BCP components. One of the BCP components is removed, leaving lines of the other BCP component as a mask for patterning the substrate.

Abstract: In directed self-assembly (DSA) of a block copolymer (BCP), a patterned sublayer on a substrate serves as a guiding chemical prepattern on which BCPs form more uniform and/or denser patterns. A layer of a blend of a BCP and functional homopolymers, referred to as inks, is deposited on the patterned sublayer and annealed to change the initial chemical prepattern to a 1:1-like chemical pattern that is more favorable to DSA. After annealing, the inks selectively distribute into blocks by DSA, and part of the inks graft on the substrate underneath the blocks. The BCP blend layer is then rinsed away, leaving the grafted inks A second layer of BCP is then deposited and annealed as a second DSA step to form alternating lines of the BCP components. One of the BCP components is removed, leaving lines of the other BCP component as a mask for patterning the substrate.

Abstract: In directed self-assembly (DSA) of a block copolymer (BCP), a patterned sublayer on a substrate serves as a guiding chemical prepattern on which BCPs form more uniform and/or denser patterns. A layer of a blend of a BCP and functional homopolymers, referred to as inks, is deposited on the patterned sublayer and annealed to change the initial chemical prepattern to a 1:1-like chemical pattern that is more favorable to DSA. After annealing, the inks selectively distribute into blocks by DSA, and part of the inks graft on the substrate underneath the blocks. The BCP blend layer is then rinsed away, leaving the grafted inks A second layer of BCP is then deposited and annealed as a second DSA step to form alternating lines of the BCP components. One of the BCP components is removed, leaving lines of the other BCP component as a mask for patterning the substrate.

Abstract: A method for sidewall spacer line doubling uses sacrificial sidewall spacers. A mandrel layer is deposited on a substrate and patterned into mandrel stripes with a pitch double that of the desired final line pitch. A functionalized polymer is deposited over the mandrel stripes and into the gaps between the stripes. The functionalized polymer has a functional group that reacts with the surface of the mandrel stripes when heated to graft a monolayer of polymer brush material onto the sidewalls of the mandrel stripes. A layer of etch mask material is deposited into the gaps between the polymer brush sidewall spacers to form interpolated stripes between the mandrel stripes. The polymer brush sidewall spacers are removed, leaving on the substrate a pattern of mandrel stripes and interpolated stripes with a pitch equal to the desired final line pitch. The stripes function as a mask to etch the substrate.

Abstract: A method using directed self-assembly of block copolymers (BCPs) for making an imprint template has the required patterns for both the features in the template's active area and the optically-detectable alignment marks in the template's non-active area. A chemical contrast pattern defined by a lithographic technique forms patterns of lines in both the active area and non-active area, as well as patterns of featureless gap regions in the non-active area. The pattern of lines has the BCP components aligned as lamellae perpendicular to the substrate, while the pattern of featureless gap regions has the BCP components aligned as lamellae parallel to the substrate. The patterns of lines and featureless gap regions in the non-active area define the optically detectable alignment marks. One of the BCP components is removed, leaving the other BCP component as an etch mask to fabricate the imprint template.

Abstract: A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.

Abstract: A method for making an imprint mold uses sidewall spacer line doubling, but without the need to transfer the sidewall spacer patterns into the mold substrate. A base layer is deposited on the mold substrate, followed by deposition and patterning of a mandrel layer into stripes with tops and sidewalls. A layer of spacer material is deposited on the tops and sidewalls of the mandrel stripes and on the base layer between the mandrel stripes. The spacer material on the tops of the mandrel stripes and on the base layer between the mandrel stripes is then removed. The mandrel stripes are then etched away, leaving stripes of sidewall spacer material on the base layer. The resulting mold is a substrate with pillars of sidewall spacer material patterned as stripes and extending from the substrate, with the sidewall spacers serving as the mold features for imprinting.

Abstract: A method for making a nanoimprinting master template uses a metallic etch stop layer for two etching steps. A layer of silicon dioxide is deposited on the etch stop layer and a first resist pattern of either concentric rings or radial spokes is formed on the silicon dioxide layer. The exposed silicon dioxide layer is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide rings or spokes on the etch stop layer. A second resist pattern of rings (if spokes were the first pattern) or spokes (if rings were the first pattern) is formed over the silicon dioxide rings or spokes and the etch stop layer. The exposed silicon dioxide is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide pillars on the etch stop layer.

Abstract: A method for sidewall spacer line doubling uses thermal atomic layer deposition (ALD) of a titanium oxide (TiOx) spacer layer. A hardmask layer is deposited on a suitable substrate. A mandrel layer of diamond-like carbon (DLC) is deposited on the hardmask layer and patterned into stripes with tops and sidewalls. A layer of TiOx is deposited, by thermal ALD without the assistance of plasma or ozone, on the tops and sidewalls of the mandrel stripes. Thermal ALD of the TiO2, without energy assistance by plasma or ozone, has been found to cause no damage to the DLC mandrel stripes. After removal of the TiOx from the tops of the mandrel stripes and removal of the mandrel stripes, stripes of TiO2 are left on the hardmask layer and may be used as an etch mask to transfer the pattern into the hardmask layer.

Abstract: In imprint lithography, the mold is coated with a surface release layer for a non-sticking separation. Bonding strength of the release layer to the mold depends on the cleanness of the surface and the process of release layer deposition. In accordance with the invention, the mold is disposed in an evacuable chamber, cleaned to remove surface organic contamination and coated with the surface release layer in a chamber, all without relocation or undesired time delay. The chamber encloses a support chuck for the mold or substrate, a surface cleaner unit adjacent the support, a heating source adjacent the support, and advantageously, sensors of measuring chamber pressure, vapor partial pressure and moisture concentration. A vapor source connected to the chamber supplies release surfactant vapor. The mold is cleaned, and the cleaning is followed by vapor phase deposition of the surfactant. The mold is advantageously heated. Typical ways of cleaning include exposure to ozone or plasma ion etch.

Abstract: An imprint system for imprint lithography comprises an alignment subsystem and an imprint subsystem. The mask (mold) and the wafer for imprinting (substrate) are align on the alignment subsystem and contacted to each other to form a mask/wafer set. The mask/wafer set is then transferred onto the imprint subsystem while alignment is maintained. The mask/wafer set is then imprinted on the imprint subsystem. During transfer, the mask/wafer set can be held in alignment by surface. The surface adhesion can be enhanced by local pressing, local heating, or both. Alternatively, the mask/wafer set can be held in alignment by clamping. Advantageously, the imprinting is effected by fluid pressure imprinting.

Abstract: In imprint lithography, the mold is coated with a surface release layer for a non-sticking separation. Bonding strength of the release layer to the mold depends on the cleanness of the surface and the process of release layer deposition. In accordance with the invention, the mold is disposed in an evacuable chamber, cleaned to remove surface organic contamination and coated with the surface release layer in a chamber, all without relocation or undesired time delay. The chamber encloses a support chuck for the mold or substrate, a surface cleaner unit adjacent the support, a heating source adjacent the support, and advantageously, sensors of measuring chamber pressure, vapor partial pressure and moisture concentration. A vapor source connected to the chamber supplies release surfactant vapor. The mold is cleaned, and the cleaning is followed by vapor phase deposition of the surfactant. The mold is advantageously heated. Typical ways of cleaning include exposure to ozone or plasma ion etch.