Abstract: A method of re-identifying a rough gemstone comprises providing a 3D model of a first rough gemstone; generating a series of virtual 2D silhouette images of the 3D model; processing each 2D image of the series of virtual 2D silhouette images to obtain a dataset associated with the first rough gemstone; and comparing the dataset of the first rough gemstone with an existing dataset of a rough gemstone. Where the dataset of the first rough gemstone and the existing dataset match each other, the method comprises re-identifying the first rough gemstone as the same rough gemstone from which the existing dataset was obtained.

Abstract: A method of determining an optimal target gemstone to be obtained from a rough gemstone comprises obtaining a first series of 2D images of the rough gemstone; providing a 3D model of a target gemstone to be obtained from the rough gemstone; and generating a second series of 2D images of the target gemstone from the 3D model thereof. The method then comprises comparing the first and second series of 2D images to determine an optimal transformation to be applied to the 3D model of the target gemstone.

Abstract: A user equipment (UE), baseband processor or other network device (e.g., base station, next generation NodeB, etc.) can operate to process or generate measurement gap configurations associated with multiple universal subscriber identity modules (MUSIM) with dual subscriber identify modules (SIMs). A UE can perform a system information request or an SI reading with or without the SI request based on a UE configured interruption or a preconfigured measurement gap configuration to read a system information block (SIB) 1 and at least one other SIB of SI associated with the target network.

Abstract: A method of re-identifying a rough gemstone comprises providing a 3D model of a first rough gemstone; generating a series of virtual 2D silhouette images of the 3D model; processing each 2D image of the series of virtual 2D silhouette images to obtain a dataset associated with the first rough gemstone; and comparing the dataset of the first rough gemstone with an existing dataset of a rough gemstone. Where the dataset of the first rough gemstone and the existing dataset match each other, the method comprises re-identifying the first rough gemstone as the same rough gemstone from which the existing dataset was obtained.

Abstract: A method of re-identifying a rough gemstone comprises providing a 3D model of a first rough gemstone; generating a series of virtual 2D silhouette images of the 3D model; processing each 2D image of the series of virtual 2D silhouette images to obtain a dataset associated with the first rough gemstone; and comparing the dataset of the first rough gemstone with an existing dataset of a rough gemstone. Where the dataset of the first rough gemstone and the existing dataset match each other, the method comprises re-identifying the first rough gemstone as the same rough gemstone from which the existing dataset was obtained.

Abstract: The present disclosure provides a method for preparing an N-P compound fertilizer from incinerated sewage sludge ash (ISSA), and relates to the technical field of compound fertilizer production. In the present disclosure, the ISSA is used as a main raw material, and a phosphorus-rich supernatant is obtained using high-concentration nitric acid at a low liquid-to-solid ratio. The phosphorus-rich supernatant and aqueous ammonia are mixed to obtain a white precipitate. The white precipitate is dried and pulverized to obtain a high-grade N-P compound fertilizer. The present disclosure realizes the resource utilization of excess sludge in sewage treatment plants.

Abstract: A method of determining an optimal target gemstone to be obtained from a rough gemstone comprises obtaining a first series of 2D images of the rough gemstone; providing a 3D model of a target gemstone to be obtained from the rough gemstone; and generating a second series of 2D images of the target gemstone from the 3D model thereof. The method then comprises comparing the first and second series of 2D images to determine an optimal transformation to be applied to the 3D model of the target gemstone.

Abstract: A method of re-identifying a rough gemstone comprises providing a 3D model of a first rough gemstone; generating a series of virtual 2D silhouette images of the 3D model; processing each 2D image of the series of virtual 2D silhouette images to obtain a dataset associated with the first rough gemstone; and comparing the dataset of the first rough gemstone with an existing dataset of a rough gemstone. Where the dataset of the first rough gemstone and the existing dataset match each other, the method comprises re-identifying the first rough gemstone as the same rough gemstone from which the existing dataset was obtained.

Abstract: A garment storage apparatus that comprises a hanger support frame and at least one hanger releasably resting on the hanger support frame; the hanger support frame comprising: an upper support, a lower support, a right support, a left support; with the upper support joining the top portion of the left and right supports and the lower support joining the bottom portions of the left and right supports; a first hanger hook on the left support and a corresponding first hanger hook on the right support, and a second hanger hook on the left support and a corresponding second hanger hook on the right support; the hanger comprising: a crown, and arms extending outwardly from the crown, with the crown having a horizontal length at least the same distance as the distance of the corresponding hanger hooks on the left and right supports so that the hanger can be removably placed on the corresponding hanger hooks.

Abstract: A garment storage apparatus that comprises a hanger support frame and at least one hanger releasably resting on the hanger support frame; the hanger support frame comprising: an upper support, a lower support, a right support, a left support; with the upper support joining the top portion of the left and right supports and the lower support joining the bottom portions of the left and right supports; a first hanger hook on the left support and a corresponding first hanger hook on the right support, and a second hanger hook on the left support and a corresponding second hanger hook on the right support; the hanger comprising: a crown, and arms extending outwardly from the crown, with the crown having a horizontal length at least the same distance as the distance of the corresponding hanger hooks on the left and right supports so that the hanger can be removably placed on the corresponding hanger hooks.

Abstract: The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially.

Abstract: A method includes forming a semiconductor fin on a semiconductor substrate; depositing a cladding layer on a portion of the semiconductor fin, wherein the cladding layer comprises a metalloid; annealing the semiconductor substrate to oxidize the cladding layer such that ions are condensed therefrom and are diffused into the semiconductor fin while the cladding layer is converted to an oxide layer; and removing the oxide layer to expose the semiconductor fin having a diffused fin portion comprising greater than or equal to 55% of the metalloid.

Abstract: A high speed transimpedance amplifier includes an inverting unit, at least one gain module, and a feedback resistor. The inverting unit has an input terminal coupled to a photodiode for receiving an input voltage, and an output terminal for outputting a first voltage. The at least one gain module has an input terminal coupled to the output terminal of the inverting unit for receiving the first voltage, and an output terminal for outputting an output voltage. Each gain module includes a first gain inverting unit and a second gain inverting unit which are coupled to each other. The first gain inverting unit and the second gain inverting unit dominate bandwidth of the high speed transimpedance amplifier. The feedback resistor is coupled to the input terminal of the inverting unit and the output terminal of the at least one gain module for determining a transimpedance of the high speed transimpedance amplifier.

Abstract: A high speed transimpedance amplifier includes an inverting unit, at least one gain module, and a feedback resistor. The inverting unit has an input terminal coupled to a photodiode for receiving an input voltage, and an output terminal for outputting a first voltage. The at least one gain module has an input terminal coupled to the output terminal of the inverting unit for receiving the first voltage, and an output terminal for outputting an output voltage. Each gain module includes a first gain inverting unit and a second gain inverting unit which are coupled to each other. The first gain inverting unit and the second gain inverting unit dominate bandwidth of the high speed transimpedance amplifier. The feedback resistor is coupled to the input terminal of the inverting unit and the output terminal of the at least one gain module for determining a transimpedance of the high speed transimpedance amplifier.

Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: A plurality of texture maps for a 3D computer model of an object are generated by processing images of the object, data defining the computer model, and data defining the relative positions and orientations of the images and computer model. A respective texture map is generated for the viewing position and direction of each image. Each texture map stores texture data for all parts of the computer model which are visible from the associated viewing position and direction and also texture data for all invisible parts of the computer model. Each texture map therefore stores texture data that can be used for rendering accurate images of the 3D computer model over a wide range of viewing positions and directions.

Abstract: View-dependent texture images and view-independent texture data for a 3D computer model are processed to compress each view-dependent texture image by subtracting the view-dependent data and view-independent data in a common 2D image space to generate a difference image, and compression encoding the difference image. The difference images, 3D computer model and view-independent texture data are transmitted to a second apparatus, where the difference data and view-independent texture data are recombined in a common 2D image space as part of the processing to render an image.