Abstract: A user equipment (UE), baseband processor or other network device (e.g., base station, next generation NodeB, etc.) can operate to process or generate measurement gap configurations associated with multiple universal subscriber identity modules (MUSIM) with dual subscriber identify modules (SIMs). A UE can perform a system information request or an SI reading with or without the SI request based on a UE configured interruption or a preconfigured measurement gap configuration to read a system information block (SIB) 1 and at least one other SIB of SI associated with the target network.

Abstract: The present invention discloses a flue gas low-temperature adsorption denitrification method, including: pressurizing a flue gas that has been subjected to dust removal and desulfurization, precooling the pressurized flue gas, cooling the precooled flue gas to a temperature lower than room temperature by a flue gas cooling system, flowing the flue gas at the temperature lower than room temperature into a low-temperature denitrification system, performing physical adsorption denitrification in the low-temperature denitrification system, precooling the flue gas that has been subjected to dust removal and desulfurization with the denitrificated flue gas, and flowing the heat-absorbed clean flue gas into a chimney to be discharged.

Abstract: An electrical device includes an electrical conductor and a printed circuit board assembly (PCBA). The PCBA includes a planar substrate having first and second primary surfaces. The second primary surface is adjacent to the electrical conductor. A point field detector is mounted to the first primary surface. A magnetic shielding array is constructed of a magnetic material, e.g., having a relative magnetic permeability of about 100-1000. The magnetic shielding array is mounted to or situated on the first and/or second primary surface of the planar substrate, and includes first and second flux shield portions flanking the point field detector. The point field detector and the magnetic shielding array are both located on the same side of the electrical conductor with respect to each other.