Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate covered with a conductive layer; removing part of the conductive layer by dry etching to form a first groove, a depth of the first groove being less than a thickness of the conductive layer, and there being polymer residue on a groove wall of the first groove; removing part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines; and forming a passivation layer filled into the second groove.

Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate covered with a conductive layer; removing part of the conductive layer by dry etching to form a first groove, a depth of the first groove being less than a thickness of the conductive layer, and there being polymer residue on a groove wall of the first groove; removing part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines; and forming a passivation layer filled into the second groove.