Patents by Inventor He Xie

He Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11121230
    Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: September 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Yu Chen, Wei-Ting Chang, Yu-Shine Lin, Jiang-He Xie
  • Publication number: 20200140878
    Abstract: A tobacco arsenic transport gene NtNIP7-1 and a cloning method and application thereof are disclosed. A nucleotide sequence of the tobacco arsenic transport gene NtNIP7-1 is shown as SEQ ID: No. 1, and an encoded amino acid sequence thereof is shown as SEQ ID: No. 2. The cloning method of the tobacco arsenic transport gene NtNIP7-1 includes (S1) extracting RNA in tobacco, performing reverse transcription, and obtaining a first-strand cDNA; and (S2) taking the first-strand cDNA obtained by the reverse transcription as a template, synthesizing a specific primer according to sequences of the NtNIP7-1 gene, performing PCR amplification, recovering and purifying a product of the PCR amplification, and sequencing. In the present invention, inhibition of the expression of the tobacco endogenous gene NtNIP7-1 in tobacco plants is able to significantly reduce the arsenic content of tobacco leaves, and has broad application prospects in the field of low arsenic content breeding.
    Type: Application
    Filed: September 24, 2019
    Publication date: May 7, 2020
    Inventors: Ge Bai, Dahai Yang, Tao Pang, He Xie, Yong Li, Heng Yao, Yongping Li, Xuejun Chen, Bingguang Xia, Dunhuang Fang, Yahui Wang, Chunjiang Yang, Chendong Zhang, Xingfu Wu, Jianmin Zeng
  • Publication number: 20050133165
    Abstract: A chemical vapor deposition apparatus for titanium-nitride application that is useful for preventing contaminants caused by arching between a substantially planar substrate and a substrate supporting apparatus during the deposition cycle. The apparatus includes a chemical vapor deposition chamber having a substrate-supporting heater. An annular housing supported by the heater, and a conductive strap that connectively secures the substrate-supporting heater to the annular housing by using holes instead of conventional slots. The conductive strap is designed as a flexure to flex with process temperature changes to improve electrical connectivity at its terminal connection and to prevent degradation. The annular housing has a top and a bottom surface and a cylindrical wall extending peripherally below the surfaces. The cylindrical wall encircles an isolator ring.
    Type: Application
    Filed: December 23, 2003
    Publication date: June 23, 2005
    Inventors: Kuang-Hsing Liu, Peter Chi, Yo-Cheng Hsueh, Jason Wu, Jiang-He Xie, Jake Chang, Wen-Hsing Liang, Hung-Cheng Chen, Kuo-Wen Chen, Feng-Shih Chiu