Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: A memory device includes a first memory array, a first isolation cell abutting a first side of the first memory array, a first edge cell array abutting a second side, opposite to the first side, of the first memory array, a second memory array arranged at a first side, opposite to the first memory array, of the first isolation cell, a second edge cell array, and multiple first word lines passing through the first edge cell array, the first memory array and being terminated at the first isolation cell. A first width of the first isolation cell is different from a second width of the first edge cell array. The second memory array is sandwiched between the second edge cell array and the first isolation cell.

Abstract: A circuit includes a power management circuit configured to receive at least a first or a second control signal, and to supply at least a first, second or a third supply voltage. The first control signal has a first voltage swing. The second control signal has a second voltage swing. The power management circuit includes a first level shifter circuit configured to generate a first level shifted signal in response to the first control signal, and a first header circuit coupled to at least the first level shifter circuit, a first voltage supply and a second voltage supply. The first header circuit is configured to supply the first supply voltage of the first voltage supply to the first node in response to the first control signal, and to supply the second supply voltage of the second voltage supply to the second node in response to the first level shifted signal.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first P-type transistor coupled to the NAND logic gate, and configured to receive a first clock signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.

Abstract: A latch circuit includes a latch clock generator configured to generate a latched clock signal based on a clock signal and an enable signal, and an input latch coupled to the latch clock generator to receive the latched clock signal. The input latch is configured to generate a latched output signal based on the latched clock signal and an input signal. In response to the enable signal having a disabling logic level, the latch clock generator is configured to set a logic level of the latched clock signal to a corresponding disabling logic level, regardless of the clock signal. In response to the corresponding disabling logic level of the latched clock signal, the input latch is configured to hold a logic level of the latched output signal unchanged, regardless of the input signal having one or more logic level switchings, while the enable signal is having the disabling logic level.

Abstract: A circuit includes a series of a first latch circuit, selection circuit, second latch circuit, and pre-decoder. A control circuit, based on a clock signal, outputs control signals to the selection circuit and first and second latch circuits, and, to the pre-decoder, a pulse signal including a first pulse during a first portion of a clock period in response to a read enable signal having a first logical state, and a second pulse during a second portion of the clock period in response to a write enable signal having the first logical state. Based on the control signals, the selection circuit and first and second latch circuits output read and write addresses to the pre-decoder during the respective first and second clock period portions, and the pre-decoder outputs a partially decoded address in response to each of the read address and first pulse, and the write address and second pulse.

Abstract: A memory device includes a memory array, a first latch and a first logic element. The memory array is configured to operate according to a first global write signal. The first latch is configured to generate a first latch write data based on a clock signal. The first logic element is configured to generate the first global write signal based on the clock signal and the first latch write data.

Abstract: An iron core-annular array multi-ring magnetosensitive current sensor and a current measurement method, the method comprising: using a first loop structure (101) to acquire a feedback current signal generated according to a first magnetic field signal generated by a primary side current; using a second loop structure (102) to measure a second magnetic field signal generated by the current of a wire in a coil; and using a digital processing unit (103) to calculate, according to the feedback current signal and the second magnetic field signal, the feature quantity that characterizes the current of the wire, and determining the current on the wire according to the feature quantity that characterizes the current of the wire.

Abstract: The embodiments of the present disclosure provide methods and apparatuses for control of Quality of Service (QoS). A method applied in a base station for control of QoS includes: receiving a Core Network (CN) flow identifier and information on a corresponding QoS parameter of a Packet Data Network (PDN) connection as transmitted from a CN control network element and creating a mapping relation between the CN flow identifier and the corresponding QoS parameter; and utilizing, after determining based on the received information on the QoS parameter of the PDN connection that a radio bearer satisfying a requirement of the QoS parameter exists between a user terminal and the base station, the existing radio bearer satisfying the requirement of the QoS parameter, creating a mapping relation between the existing radio bearer and the CN flow identifier of the PDN connection and transmitting information on the mapping relation to the user terminal.

Abstract: Porous structures are made from compositions that include hollow glass bodies and an inorganic powder. The inorganic powder may act as a rigid frame member, a crystallization agent, or both, which reduces the shrinkage of the porous structures during firing. The porous structures made therefrom have an open porosity of greater than 70% and reduced shrinkage of less than 10% compared to the green structures prior to firing. Methods for firing the green structures made from the compositions are also disclosed, the firing methods including reducing a temperature ramping rate of the green structures during a crystallization temperature range of the glass of the hollow bodies.

Abstract: A wind turbine planet gear shaft has a shaft body with an outer surface, a segment of the outer surface being a slide bearing surface configured to form a radial slide bearing with an inner opening of a planet gear. The slide bearing surface has a first portion configured as a non-load-bearing zone and a second portion configured as a load-bearing zone and exactly one axially elongate oil pocket in the slide bearing surface, that oil pocket being located in the non-load-bearing zone. An oil supply channel in the shaft body has a first end in communication with the oil pocket, and first and second oil return channels in the slide bearing surface each have a first end at a longitudinal end of the oil pocket and a second end open to ambient air.

Abstract: A device includes a virtual power line directly connected to each bitcell in a group of bitcells and a group of transistor switches connected between the virtual power line and a power supply. The device also includes a delay circuit, a first wakeup detector, and a plurality of main input-output (MIO) controllers. The delay circuit is coupled to the gate terminal of each transistor switch of the group of transistor switches. The first wakeup detector is configured to generate a first trigger signal in response to receiving a signal from the delay circuit. The plurality of main input-output (MIO) controllers is configured to be coupled to the power supply through a first group of wakeup switches and through a first group of function switches. A gate terminal of each wakeup switch in the first group of wakeup switches is configured to receive the first trigger signal.

Abstract: Disclosed herein is a method for determining whether a subject is suffering from, or is at risk of developing breast cancer, wherein the method comprises detecting differential expression levels of at least two or more miRNA markers from a biological sample. Also disclosed herein is a method of determining whether a subject is suffering from, or is at risk of developing, breast cancer based on miRNA expression.

Abstract: A device includes a first virtual power line coupled to a power supply through a first group of transistor switches, and a second virtual power line configured to receive the power supply through a second group of transistor switches. The device also includes a delay circuit coupled between the gate terminals of the first group of transistor switches and the gate terminals in the second group of transistor switches. The device further includes a wakeup detector and a plurality of main input-output (MIO) controllers. The wakeup detector is configured to generate a trigger signal after receiving a signal from the output of the delay circuit. The plurality of MIO controllers is coupled to the power supply through a group of wakeup switches and through a group of function switches. The gate terminals in the group of wakeup switches are configured to receive the trigger signal.

Abstract: Various embodiments are directed to frequency and voltage tuning for systems with multiple application-specific integrated circuits (ASICs) and disclosed herein may be applied to multi-AIC systems in a variety of applications, such as high-performance computing, artificial intelligence, graphics applications, and cryptocurrency or blockchain mining functions.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: Disclosed is a method for nanomorphological modification of polyether ether ketone (PEEK) surface by hot pressing, relating to the technical field of biomaterials. The method includes the following steps: S1, preparing SiO2 nanospheres; S2, uniformly laying the SiO2 nanospheres prepared in the S1 on a surface of a PEEK material; S3, heating the surface of the PEEK material to a temperature higher than a glass phase transition temperature, then carrying out hot pressing to embed the SiO2 nanospheres into the surface of the PEEK material, and naturally cooling at room temperature after the hot pressing; S4, after cooling, using NaOH solution to corrode and remove the SiO2 nanospheres on the surface of the PEEK material after hot pressing in S3 to form a structure with nanoconcaves, then obtaining a hot-pressed modified PEEK material.

Abstract: A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Abstract: This disclosure provides an energy storage apparatus, an energy storage apparatus control method, and a photovoltaic system. The energy storage apparatus includes: a plurality of battery clusters, a plurality of conversion units, a start unit, and a controller. The controller includes a plurality of control units. The start unit is configured to: after receiving a start signal, control a control switch in at least one battery cluster to close, to start a control unit corresponding to the battery cluster. The control unit is configured to: determine, based on a state of the control switch in the battery cluster, whether a black start mode is on; and when determining that the black start mode is on, control a DC-DC converter in the corresponding conversion unit to release electric energy stored in a battery pack in the corresponding battery cluster, to energize a direct current bus.