Patents by Inventor Hea Yang

Hea Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-level cell of flash memory device
    Publication number: 20070004148
    Abstract: An embodiment of the present invention relates to a flash memory device with an improved data retention characteristic. A height of a floating gate is set lower than that of the conventional floating gate, or an overlap width between the floating gate and isolation structures is set narrower than those between the conventional isolation structures and floating gate. Accordingly, the surface area of the floating gate, which is influenced by mobile ion, can be reduced. It is therefore possible to improve a data retention characteristic in the flash memory cell.
    Type: Application
    Filed: June 28, 2006
    Publication date: January 4, 2007
    Applicant: Hynix Semiconductor, Inc.
    Inventor: Hea Yang