Patents by Inventor Hean-Cheal Lee

Hean-Cheal Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processing chamber with substrate edge enhancement processing
    Patent number: 11094511
    Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: August 17, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Changhun Lee, Michael D. Willwerth, Valentin N. Todorow, Hean Cheal Lee, Hun Sang Kim
  • PROCESSING CHAMBER WITH SUBSTRATE EDGE ENHANCEMENT PROCESSING
    Publication number: 20200152431
    Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 14, 2020
    Inventors: Changhun LEE, Michael D. WILLWERTH, Valentin N. TODOROW, Hean Cheal LEE, Hun Sang KIM
  • Removing whisker defects
    Patent number: 7351663
    Abstract: A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: April 1, 2008
    Assignee: Cypress Semiconductor Corporation
    Inventors: Alex Kabansky, Hean-Cheal Lee, Sundar Narayanan, Prabhuram Gopalan, Vinay Krishna