Patents by Inventor Heather Diane Hudspeth

Heather Diane Hudspeth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gated nanorod field emitter structures and associated methods of fabrication
    Patent number: 7902736
    Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.
    Type: Grant
    Filed: January 9, 2008
    Date of Patent: March 8, 2011
    Assignee: General Electric Company
    Inventors: Heather Diane Hudspeth, Ji Ung Lee, Reed Roeder Corderman, Anping Zhang, Renee Bushey Rohling, Lauraine Denault, Joleyn Eileen Balch
  • Gated nanorod field emitter structures and associated methods of fabrication
    Patent number: 7411341
    Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: August 12, 2008
    Assignee: General Electric Company
    Inventors: Heather Diane Hudspeth, Reed Roeder Corderman, Renee Bushey Rohling, Lauraine Denault
  • GATED NANOROD FIELD EMITTER STRUCTURES AND ASSOCIATED METHODS OF FABRICATION
    Publication number: 20080129178
    Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.
    Type: Application
    Filed: January 9, 2008
    Publication date: June 5, 2008
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Heather Diane Hudspeth, Ji Ung Lee, Reed Roeder Corderman, Anping Zhang, Renee Bushey Rohling, Lauraine Denault, Joleyn Eileen Balch
  • Gated nanorod field emitter structures and associated methods of fabrication
    Patent number: 7326328
    Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.
    Type: Grant
    Filed: July 19, 2005
    Date of Patent: February 5, 2008
    Assignee: General Electric Company
    Inventors: Heather Diane Hudspeth, Ji Ung Lee, Reed Roeder Corderman, Anping Zhang, Renee Bushey Rohling, Lauraine Denault, Joleyn Eileen Balch
  • Gated nanorod field emitter structures and associated methods of fabrication
    Patent number: 7279085
    Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.
    Type: Grant
    Filed: July 19, 2005
    Date of Patent: October 9, 2007
    Assignee: General Electric Company
    Inventors: Heather Diane Hudspeth, Reed Roeder Corderman, Renee Bushey Rohling, Lauraine Denault