Patents by Inventor Heather Marie Klesat

Heather Marie Klesat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a conductive plug between conductive layers of an integrated circuit
    Patent number: 6372638
    Abstract: A method for forming void free tungsten plug contacts (56a-56c) begins by etching a contact opening (55a-55c) using a C2F6 and CHF3 chemistry. The etch chemistry is then changed to an O2 and CH3F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids (22) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.
    Type: Grant
    Filed: June 22, 2000
    Date of Patent: April 16, 2002
    Assignee: Motorola, Inc.
    Inventors: Robert Arthur Rodriguez, Heather Marie Klesat
  • Method for forming an integrated circuit
    Patent number: 6143648
    Abstract: A method for forming void free tungsten plug contacts (56a-56c) begins by etching a contact opening (55a-55c) using a C.sub.2 F.sub.6 and CHF.sub.3 chemistry. The etch chemistry is then changed to an O.sub.2 and CH.sub.3 F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids (22) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: November 7, 2000
    Assignee: Motorola, Inc.
    Inventors: Robert Arthur Rodriguez, Heather Marie Klesat