Patents by Inventor Hea-young Yoon

Hea-young Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inductively coupled plasma system
    Patent number: 6835919
    Abstract: An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: December 28, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yuri Nikolaevich Tolmachev, Dong-joon Ma, Chang-wook Moon, Hea-young Yoon
  • Inductively coupled plasma system
    Publication number: 20030111963
    Abstract: An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.
    Type: Application
    Filed: September 30, 2002
    Publication date: June 19, 2003
    Inventors: Yuri Nikolaevich Tolmachev, Dong-Joon Ma, Chang-Wook Moon, Hea-Young Yoon