Patents by Inventor Hebert Francois

Hebert Francois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOSFET device having recessed gate-drain shield and method
    Patent number: 6001710
    Abstract: A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
    Type: Grant
    Filed: March 30, 1998
    Date of Patent: December 14, 1999
    Assignee: Spectrian, Inc.
    Inventors: Hebert Francois, Szehim Ng