Abstract: A method for manufacturing a female mold is provided in the embodiments of the disclosure, comprising: providing a substrate; forming a substrate layer of the female mold on the substrate; forming on the substrate layer of the female mold a mask layer which is adapted to exposure by an X-ray; and exposing the substrate layer of the female mold to the X-ray from a side of the mask layer away from the substrate. A direction in which the X-ray irradiates is inclined at a predetermined oblique angle to the substrate layer of the female mold, in the process of exposing to the X-ray. Besides, a female mold is also provided.

Abstract: The present disclosure provides a circuit substrate, a method for manufacturing the same, a display substrate and a tiled display device. The circuit substrate includes: a base substrate; a driving circuit on the base substrate; and conductive connection portions. A plurality of grooves is defined in a lateral side of the base substrate; each of the plurality of grooves extends through a top surface and an opposite bottom surface of the base substrate. The driving circuit includes signal lines on the top surface of the base substrate and signal-line leads on the bottom surface of the base substrate. The plurality of conductive connection portions are corresponding to the plurality of grooves in a one-to-one manner; at least one part of the conductive connection portion is in the corresponding groove. The conductive connection portion is connected with the corresponding signal line and the corresponding signal-line lead, respectively.

Abstract: A display panel, a manufacturing method thereof and a display system. The display panel includes: an opposite substrate and an array substrate that are opposite to each other, a liquid crystal layer between the opposite substrate and the array substrate, and a reflective polarizer on the opposite substrate, wherein the reflective polarizer is on a side of the liquid crystal layer away from the array substrate.

Abstract: An array substrate includes a substrate, a dual-gate oxide thin film transistor TFT, an electrode for display and a polycrystalline silicon TFT. The dual-gate oxide thin film transistor TFT and the electrode for display are located in a sub-pixel on the substrate, and a drain electrode of the dual-gate oxide TFT is electrically connected to the electrode for display.

Abstract: A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer.

Abstract: A thin film transistor includes: a bottom gate electrode; a bottom gate electrode insulating layer, a semiconducting active layer and a first insulating layer which are disposed on the bottom gate electrode in sequence; a source electrode and a drain electrode which are disposed at a side of the first insulating layer away from the bottom gate electrode; vias disposed in the first insulating layer at positions which correspond to the source electrode and the drain electrode respectively; and ohmic contact layers disposed on and covering the semiconducting active layer at positions corresponding to the vias respectively. Each of the source electrode and the drain electrode is in contact with a corresponding one of the ohmic contact layers through a corresponding one of the vias.

Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: A holographic optical apparatus includes a beam splitting component, a transmission assembly, a focal length modulation component and an optical element. The beam splitting component splits received light into reference light and signal light that are coherent light, and outputs the reference light and the signal light. The focal length modulation component includes a plurality of local length modulation regions with different focal lengths. The optical element includes a recording medium layer with a plurality of recording regions, and each recording region is located in a light-exit path of a focal length modulation region. The transmission assembly is disposed in a light-exit path of the beam splitting component, transmit the reference light to the plurality of recording regions and transmit the signal light to the plurality of focal length modulation regions.

Abstract: The present application discloses an array substrate, a display apparatus and a method of fabricating an array substrate. The array substrate has a plurality of first bottom-gate type thin film transistors each of which including a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which including a silicon active layer.

Abstract: A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: The present application discloses a display substrate. The display substrate includes a base substrate; a color filter on the base substrate and including a plurality of color filter blocks; and an actuator configured to actuate each of the plurality of color filter blocks thereby controlling a wavelength of light transmitted through each of the plurality of color filter blocks.

Abstract: An OLED display screen, a display panel and a manufacturing method thereof are disclosed in the present disclosure, the method includes: fabricating a TFT array substrate and an OLED component on a substrate, where the OLED component includes a first electrode, a light-emitting layer, and a second electrode; and fabricating a first organic layer on a side of the second electrode away from the substrate, where the first organic layer is capable of chemically reacting with the second electrode.

Abstract: The embodiments of the present disclosure provide a 3D display device and a manufacturing method thereof. The 3D display device includes a first substrate; a second substrate disposed opposite to the first substrate; a black matrix; and a grating. The black matrix and the grating are disposed on a side of the first substrate facing away from the second substrate; the black matrix and the grating are disposed in a same layer; and a side of the first substrate where the black matrix and the grating are located is a light exit side of the 3D display device.

Abstract: A method for manufacturing a side wire for a substrate and a substrate structure are provided. The method includes: forming a plurality of first pattern structures on a side surface of the substrate, wherein a gap between any adjacent two of the plurality of first pattern structures connects a top surface and a bottom surface of the substrate to each other; forming a conductive material film covering the side surface of the substrate; and removing the plurality of first pattern structures and a portion of the conductive material film that is attached on the plurality of first pattern structures, and maintaining a portion of the conductive material film that is located between any adjacent two of the plurality of first pattern structures as the side wire.

Abstract: A method of forming an array substrate, the array substrate and a display device are provided. The method of forming the array substrate includes: in a case that a display unit is formed on one of two opposite surfaces of a base substrate and a driving circuit is formed on the other of the two opposite surfaces of the base substrate, performing a roughening treatment on edge regions of the two opposite surfaces of the base substrate and a side surface of the base substrate connecting the edge regions of the two opposite surfaces, to form a roughened region; and forming, at the roughened region, a metal wiring connecting a signal input terminal of the display unit and a signal output terminal of the driving circuit.

Abstract: A substrate includes a driving backplane, a plurality of first connecting lines and a plurality of second connecting lines. The driving backplane includes a base substrate, at least one first lead group and at least one second lead group. Each first lead group includes a plurality of first leads, and each second lead group includes a plurality of second leads. A first lead group and a corresponding second lead group is disposed in a peripheral region. The plurality of first connecting lines are disposed on at least one side face of the driving backplane, each first connecting line is electrically connected to at least one first lead. The plurality of second connecting lines are disposed on the at least one side face of the driving backplane, each second connecting line is electrically connected to at least one second lead, and is in contact with a corresponding first connecting line.

Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: A display device includes a first display panel and a second display. The second display panel of the display device is transparent, and the second display panel of the display device is configured to allow an image displayed on the first display panel to be visible through the second display panel.

Abstract: The present disclosure discloses a micro LED display panel and a preparation method thereof. The display panel includes a base substrate, including a first surface and a second surface opposite to each other; a plurality of micro LEDs and a driving circuit arranged on the base substrate; and a plurality of through structures and a plurality of metal film connecting portions.