Patents by Inventor Hechu Liu

Hechu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InGaAIN light-emitting device and manufacturing method thereof
    Patent number: 8384100
    Abstract: There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: February 26, 2013
    Assignee: Lattice Power (JIANGXI) Corporation
    Inventors: Fengyi Jiang, Li Wang, Chuanbing Xiong, Wenqing Fang, Hechu Liu, Maoxing Zhou
  • Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
    Patent number: 7888779
    Abstract: There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
    Type: Grant
    Filed: April 14, 2006
    Date of Patent: February 15, 2011
    Assignee: Lattice Power (Jiangxi) Corporation
    Inventors: Fengyi Jiang, Wenqing Fang, Li Wang, Chunlan Mo, Hechu Liu, Maoxing Zhou
  • METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE
    Publication number: 20090050927
    Abstract: There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
    Type: Application
    Filed: April 14, 2006
    Publication date: February 26, 2009
    Applicant: LATTICE POWER (JIANGXI) CORPORATION
    Inventors: Fengyi Jiang, Wenqing Fang, Li Wang, Chunlan Mo, Hechu Liu, Maoxing Zhou
  • InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20090026473
    Abstract: There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.
    Type: Application
    Filed: May 26, 2006
    Publication date: January 29, 2009
    Applicant: LATTICE POWER (JIANGXI) CORPORATION
    Inventors: Fengyi Jiang, Li Wang, Chuanbing Xiong, Wenqing Fang, Hechu Liu, Maoxing Zhou