Patents by Inventor Hector Julian De La Rosa

Hector Julian De La Rosa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9973150
    Abstract: Embodiments of a Doherty amplifier device are provided, where the device includes a main amplifier that produces a first RF signal with a variable first output power and a peaking amplifier that produces a second RF signal with a variable second output power equivalent to the first output power multiplied by a power ratio n greater than one; first and second RF signals combined in phase at a combining node; and a main output matching network (OMN), wherein the main OMN forms a portion of an equivalent main path transmission line having a characteristic impedance equivalent to (n+1)·?{square root over (Ropt·R0)}, wherein Ropt is a load impedance seen at the main amplifier intrinsic current generator plane during a full power condition of the Doherty amplifier device and (n+1)·R0 is a load impedance seen at the combining node during a back-off power condition of the Doherty amplifier device.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: May 15, 2018
    Assignee: NXP USA, Inc.
    Inventors: Roy McLaren, Hector Julian De La Rosa
  • Patent number: 9966903
    Abstract: Embodiments of a Doherty amplifier device are provided, where the device includes a main amplifier that produces a first RF signal with a variable first output power and a peaking amplifier that produces a second RF signal with a variable second output power equivalent to the first output power multiplied by a power ratio n greater than one; first and second RF signals combined in phase at a combining node; and a main output matching network (OMN), wherein the main OMN forms a portion of an equivalent main path transmission line having a characteristic impedance equivalent to ( n + 1 ) · Ropt · R ? ? 0 , wherein Ropt is a load impedance seen at the main amplifier intrinsic current generator plane during a full power condition of the Doherty amplifier device and R0 is a load impedance seen at the combining node during a back-off power condition of the Doherty amplifier device.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: May 8, 2018
    Assignee: NXP USA, Inc.
    Inventors: Roy McLaren, Hector Julian De La Rosa