Patents by Inventor Hector M. Del Castillo

Hector M. Del Castillo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5648297
    Abstract: Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.
    Type: Grant
    Filed: May 21, 1996
    Date of Patent: July 15, 1997
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: True-Lon Lin, Jin S. Park, Sarath D. Gunapala, Eric W. Jones, Hector M. Del Castillo