Abstract: A lithographic apparatus is disclosed. The apparatus includes an illumination system configured to condition an extreme ultraviolet radiation beam, a patterning device configured to impart the extreme ultraviolet radiation beam with a pattern in its cross-section to form a patterned extreme ultraviolet radiation beam, a substrate table constructed to hold a substrate, a projection system provided with reflective optics configured to project the patterned extreme ultraviolet radiation beam onto a target portion of the substrate, a vacuum chamber constructed to create a vacuum environment, and a detection unit arranged within the vacuum chamber to detect contamination on the patterning device.

Abstract: A method for measuring a contour variation of a measuring area on an object. The method includes the steps of: irradiating the measuring area with a light beam, wherein reflection or transmission of the beam occurs; splitting the transmitted or reflected beam; combining the split beams with each other and observing a fringe pattern representing a differential phase between the split beams; varying the phase of the split beams relative to each other, such that the differential phase is kept within the range of 2 pi; calculating an optical path length difference from the differential phase; and relating the optical path length difference to the contour variation of the object.