Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: A method of providing a web-based e-mail service is disclosed, in which a user can conveniently check and manage e-mail messages. The method of providing a web-based e-mail service on a web site to a user having an e-mail account, the method includes the steps of: displaying basic information of each of incoming/outgoing e-mail messages in a predetermined frame of the web site when the user accesses the web site to check the e-mail messages; selecting a desired e-mail message by the user; displaying detailed information of the desired e-mail message in an incoming message displaying frame if the selected message is an incoming message; and displaying detailed information of the desired e-mail message in an outgoing message displaying frame if the selected message is an outgoing message.