Abstract: Disclosed are: a method for detecting a target biomolecule in a biological sample, in which the method can be rapidly and inexpensively performed on site to diagnose diseases such as infectious diseases; an FO-LSPR optical fiber sensor which can be used therein; and a disposable sensor cartridge having the sensor mounted. The disposal sensor cartridge of the present invention can he used in the rapid detection of a target biomolecule, by mounting an optical fiber sensor and then connecting FO-LSPR equipment thereto. When an FO-LSPR molecular diagnostic system using the optical fiber sensor cartridge of the present invention is combined with a CRISPR-Cas system, target biomolecules can be detected accurately and conveniently without nucleic acid amplification.

Abstract: There is provided a hall sensor. The hall sensor includes a hall element disposed on a semiconductor substrate. The hall element includes: a sensing region, a first electrode, a second electrode, a third electrode and a fourth electrode, and a doped region disposed on the sensing region, and the sensing region has at least one angulated corner or rounded corner.

Abstract: A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.

Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

Abstract: A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.

Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

Abstract: A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing are comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: A Hall sensor with improved doping profile is disclosed. The Hall sensor includes a semiconductor substrate, a sensing region formed on the substrate, an isolation region formed on the sensing region, and a high concentration doping region formed on an upper portion of the sensing region.

Abstract: Provided is a magnetic field sensing device (or Hall device) including a magnetic sensor (or Hall sensor) that is provided in buried form inside of a semiconductor substrate. A top portion of the magnetic field sensing device is connected to analog and digital circuitry, and the magnetic sensor included in the magnetic field sensing device obtains magnetic data that is provided to the circuitry. Accordingly, a magnetic field sensor having a reduced size is produced.

Abstract: There is provided a hall sensor. The hall sensor includes a hall element disposed on a semiconductor substrate. The hall element includes: a sensing region, a first electrode, a second electrode, a third electrode and a fourth electrode, and a doped region disposed on the sensing region, and the sensing region has at least one angulated corner or rounded corner.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: Provided is an automatic detection kit for automatically detecting HLA alleles using a real-time polymerase chain reaction (PCR). The real-time PCR is performed on DNA isolated from a sample using a primer which is able to specifically bind to HLA alleles and a fluorescent probe which is able to detect amplification of the HLA alleles in real time, and the HLA allele typing is performed by analyzing a fluorescence value obtained from the real-time PCR using an HLA automatic typing.

Abstract: Provided is an automatic detection kit for automatically detecting HLA alleles using a real-time polymerase chain reaction (PCR). The real-time PCR is performed on DNA isolated from a sample using a primer which is able to specifically bind to HLA alleles and a fluorescent probe which is able to detect amplification of the HLA alleles in real time, and the HLA allele typing is performed by analyzing a fluorescence value obtained from the real-time PCR using an HLA automatic typing program.

Abstract: A semiconductor device and a method for fabricating the same are disclosed, which are capable of improving the performance and the production yield of the device. The semiconductor device may include a semiconductor wafer having semiconductor chips thereon, a lower metal layer on the semiconductor wafer, a dielectric layer on the lower metal layer, upper conductive layers on the dielectric layer, separated into a plurality of pieces; and a passivation layer enclosing lateral sides of the pieces of the upper conductive layer. Accordingly, when dicing and separating the respective chips on the semiconductor wafer, the upper metal layer does not lift off the dielectric layer. Therefore, the performance and the production yield of the semiconductor device can be enhanced.

Abstract: A digital micromirror device has a substrate having a plurality of electrodes each spaced apart at a predetermined interval; fixed bases having a predetermined height above a surface of the substrate and arranged between the electrodes; and a plurality of micromirrors provided on the fixed bases and independently driven by an electrostatic force produced by the electrodes for changing a reflection path of incident light to form an image. The fixed bases comprise a material having a light reflectance which is lower than a material of which the plurality of micromirrors are formed.