Abstract: Disclosed is a method of adjusting the performance of a wear leveling operation depending on the pattern of a workload according to a command inputted to a storage device, thereby managing a difference in the count of erase operations between storage areas included in a memory not to exceed a limit value and enabling a wear leveling operation to be performed.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

Abstract: Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

Abstract: A wafer loading-state inspection apparatus includes a transmissive wafer sensor including a light emitter and a light detector. The light emitter is spaced apart from the light detector in a horizontal plane by a predetermined separation distance. The wafer sensor generates wafer pulses indicating whether a wafer is detected between the light emitter and the light detector. A wafer sensor support has a first arm connected to the light emitter and a second arm connected to the light detector. A vertically oriented post is connected to the wafer sensor support at one end. Connected at the other end of the post is a driving mechanism which produces a reciprocating vertical movement of the post over a vertical range.