Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract: Provided are an organic electroluminescence display device and method of fabricating the same. An organic electroluminescence display device according to the present invention includes a first substrate; a plurality of data lines arranged in a first direction on the first substrate; a plurality of gate lines arranged in a second direction on the first substrate; a plurality of pixel regions defined by the gate lines and the data lines, wherein a first pixel line is defined as a line of the pixel regions arranged in the first direction and a second pixel line is defined as a line of the pixel regions arranged in the second direction; a thin film transistor in each pixel region; a plurality of first connecting lines electrically connecting the thin film transistors of the first pixel lines with each other; and a second connecting line electrically connecting the thin film transistor of at least one of the second pixel lines.

Abstract: An organic light emitting diode display device and a driving method are provided. The organic light emitting diode display device comprises a data driver that generates a plurality of reference data voltages that have a level proportional to a gray scale level of a digital data supplied from the timing controller. The data driver supplies the data voltages to the plurality of data lines and compensates for the data voltages in accordance with a magnitude of the feedback voltages from the plurality of pixels fed back through the plurality of feedback lines under control of the timing controller.

Abstract: A multi-chip package includes a double-sided circuit board having first and second surfaces. Each surface has a package area and a peripheral area. Each package area has a chip mounting area on which a chip is attached, and a bonding area with which the chip is electrically connected. The peripheral area of the first surface has a runner area on which molding compound flows, and the peripheral area of the second surface has an external connection pattern with which the bonding areas are electrically connected. In particular, the circuit board has gate holes, which are co-located on each surface to result in a common hole.

Abstract: Provided are an apparatus for transmitting data packets between wireless sensor networks over the Internet, a wireless sensor network domain name server, and a data packet transmission method using the same. The data packet transmission apparatus includes: a radio frequency (RF) interface; an ethernet interface; and a network processor connected between the RF interface and the ethernet interface for converting a data packet input/output between a wireless sensor network and the Internet and sending the converted data packet through a corresponding interface. By sending a desired data packet using an Internet communication tunnel over the Internet, the data packet transmission apparatus, wireless sensor network domain name server, and data packet transmission method allow a user to access a wireless sensor network over the Internet anytime and anywhere, interwork directly with the Internet rather than through another server, and perform remote monitoring and control operations.

Abstract: Disclosed herein is an electrowetting system using the electrowetting phenomenon. The electrowetting system comprises an electrolyte solution consisting of 30 to 89% by weight of water, 0.01 to 30% by weight of a salt and 10 to 60% by weight of a polar solvent having a dipole moment. According to the electrowetting system, the polar solvent added to increase the viscosity of the electrolyte solution stabilizes the movement of the electrolyte solution when a voltage is applied to operate the electrowetting system. In addition, high- or low-temperature reliability of the electrowetting system can be ensured by the use of the polar solvent.

Abstract: Disclosed herein are a liquid for a liquid lens and a liquid lens module. The liquid for a liquid lens comprises an electrolyte solution and an insulating solution wherein the electrolyte solution contains H2O, 1,2-propanediol and LiCl, and the insulating solution is a silicon (Si) oil and optionally contains 1,6-dibromohexane or bromobenzene as an organic additive. The liquid lens module comprises a transparent cover, a case for accommodating an electrolyte solution and an insulating solution, a pair of electrodes for supplying electricity to the electrolyte solution, and an insulating film for covering one of the electrodes in contact with the electrolyte solution wherein the electrolyte solution contains H2O, 1,2-propanediol and LiCl, and the insulating solution is a silicon (Si) oil. The electrolyte solution and the insulating solution used in the liquid for a liquid lens satisfy the requirements for liquid lenses.

Abstract: Provided are methods for automatically selecting a cluster header to dynamically configure a wireless sensor network, and encoding and sending a packet between nodes in a wireless sensor network to secure communication. The method includes: broadcasting, at each normal node, cluster header selecting information including capability information of the normal node, identification information of a cluster including the normal node, and identification information of the normal node, to neighboring nodes; and judging, at each normal node, if the normal node will be selected as a cluster header using the cluster header selecting information received from at least one neighboring node.

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

Abstract: The present invention relates to a vertically-structured nitride semiconductor light emitting diode. The vertically-structured nitride semiconductor light emitting diode includes an n-type electrode; an n-type nitride semiconductor layer that is formed on the lower surface of the n-type electrode and on which surface texturing with a diffraction grating structure is formed, the diffraction grating structure composed of more than one line; an active layer that is formed on the lower surface of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the lower surface of the active layer; and a p-type electrode that is formed on the lower surface of the p-type nitride semiconductor layer.

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract: The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.

Abstract: The invention provides a variable focus liquid lens using electrowetting, comprising a conductive first liquid and an insulating second liquid. At least one of the first liquid composed of electrolyte and the second liquid composed of insulating liquid contains a surfactant for reducing interfacial energy between the first and second liquids. An interfacial portion between the first and second liquids is gathered by surfactant to reduce driving voltage. The variable focus liquid lens according to the invention has about 50% lower driving voltage required for changing focus, ensuring stability of the two fluids.

Abstract: The invention relates to a thickness-measuring method for an organic coating film such as an organic solderability preservative film formed on a metal film. In the method, an absorption spectrum of at least one reference organic coating film formed on a first metal surface is measured and absorption intensity in a predetermined wavelength range is calculated from the absorption spectrum. The thickness of the reference organic coating film is measured by destructive measurement. Then, correlation is defined based upon the absorption intensity and measured thickness of the reference organic coating film. An absorption spectrum of an organic coating film to be measured. Absorption intensity in the predetermined wavelength range is calculated from the absorption spectrum of the organic coating film to be measured, and the thickness of the organic coating film is calculated from the absorption intensity thereof based upon the correlation.

Abstract: The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.

Abstract: Provided is an improved nozzle structure having an openable liquid cosmetic discharging hole mounted on the top portion of a cosmetic container. With an application of the nozzle structure, virtually no alien substance or air can be flown in the container through the discharging hole perforated on the nozzle. As for the nozzle structure having an openable discharging hole thereon, an arc openable member is rotatably installed in such a manner that the openable member is not easily escaped from the main body of the nozzle, but bears on a maintaining apparatus. When the openable member is in a closed state, it completely shuts the discharging hole, so no air or alien substance can flow therein. Accordingly, the nozzle structure of the invention can be advantageously used for high functional cosmetic products.

Abstract: Disclosed is a constant discharge structure for a nozzle head lowering type vacuum cosmetics container for containing high functional cosmetics. The constant discharge structure includes a liquid collecting chamber having a liquid inflow hole in the lower portion of a piston support member mounted in the container, a groove having an inclined short jaw, a support jaw and a liquid inlet hole and an open/close unit for opening/closing the liquid inflow hole in the lower portion of a central shaft, an elastic pumping member being inserted into the groove of the shaft and including a hole having an inner wall for opening/closing the liquid inlet hole on a flat surface unit, and a cylinder incorporated inside a piston for supporting the central shaft.

Abstract: Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.