Patents by Inventor Hee-Choul Park

Hee-Choul Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4972373
    Abstract: A precharge system of the divided bit line types for a SRAM (Static Random Access Memory) reduces the active current consumption and bit line peak current by decreasing the number of bit lines to be precharged at any one time during a precharge cycle. For this, the system has a block selection signal generator that responds to certain column addresses with a block selection signal. A sub-block selection signal generator responds to certain addresses among the remaining column addresses with a sub-block selection signal. A precharge decoder responds to pulses from the pulse generator and the block selection signal with a block selection precharge signal. A divided bit line precharge decoder responds to the sub-block selection signal and block selection precharge signal with a pulse for precharging only a certain sub-block of a certain block of the array of memory cells of the SRAM.
    Type: Grant
    Filed: December 17, 1987
    Date of Patent: November 20, 1990
    Assignee: Samsung Semiconductors & Telecommunications Co., Ltd.
    Inventors: Byeong-Yun Kim, Choong-Keun Kwark, Hee-Choul Park
  • Patent number: 4962324
    Abstract: This present invention provides an equalizing cicruit for a sense amplifier comprising a sense amplifier enable signal generation section which receives a sense amplifier equalizing signal and produces a sense amplifier enable signal. An equalizing control section is connected to receive a signal from the sense amplifier enable signal generation section and the sense amplifier equalizing signal. A first and second sense amplifier equalizing signal generation sections are connected to receive an output from the equalizing control section. A third sense amplifier equalizing signal generation section is connected to receive a signal through the second sense amplifier equalizing signal generation section.
    Type: Grant
    Filed: January 3, 1989
    Date of Patent: October 9, 1990
    Assignee: Samsung Electronics, Ltd.
    Inventor: Hee-Choul Park