Abstract: A reducer of an electric power steering apparatus comprises a worm wheel and a worm shaft connected to a motor shaft, the worm wheel and the worm shaft being engaged with each. The worm wheel includes: a ring-shaped hub into which the steering shaft is inserted and having a plurality of outer protrusions formed on the outer peripheral side thereof; a teeth-shaped part, engaged with the worm shaft and formed on the outer peripheral surface thereof, and inner protrusions, formed on the inner peripheral surface thereof, protruding in a radial direction, and formed in the circumferential direction; a ring-shaped insert ring inserted into the inner side of the teeth-shaped part and having support protrusions formed on the outer peripheral side thereof; and a boss integrally injection-molded between the outer peripheral side of the hub and the inner peripheral side of the teeth-shaped part.

Abstract: A reducer of an electric power steering apparatus comprises a worm wheel and a worm shaft connected to a motor shaft, the worm wheel and the worm shaft being engaged with each. The worm wheel includes: a ring-shaped hub into which the steering shaft is inserted and having a plurality of outer protrusions formed on the outer peripheral side thereof; a teeth-shaped part, engaged with the worm shaft and formed on the outer peripheral surface thereof, and inner protrusions, formed on the inner peripheral surface thereof, protruding in a radial direction, and formed in the circumferential direction; a ring-shaped insert ring inserted into the inner side of the teeth-shaped part and having support protrusions formed on the outer peripheral side thereof; and a boss integrally injection-molded between the outer peripheral side of the hub and the inner peripheral side of the teeth-shaped part.

Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.

Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.