Patents by Inventor Hee Chun Kim

Hee Chun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240182860
    Abstract: The present disclosure relates to a cell culture composition including a Chlorella extract. According to the cell culture medium composition including the Chlorella extract according to an aspect, the medium including the Chlorella extract can improve the cell proliferation ability of bovine myogenic stem cells. Thus, the Chlorella extract can be used as a substitute for fetal bovine serum.
    Type: Application
    Filed: April 4, 2022
    Publication date: June 6, 2024
    Inventors: Sung Chun Cho, Kwan Hyeong Kim, Tae Byung Lee, Chi Sung Jung, Joon Ho Keum, Hee Jae Lee
  • Patent number: 7955760
    Abstract: Disclosed herein is a method of correcting defects in photomasks. According to one embodiment, a light absorption layer is formed on a photomask where pin hole defects occur in a light blocking layer, and light absorption patterns are formed on the pin hole defect portions by selectively etching the light absorption layer. According to another embodiment, a light absorption layer is formed on a backside of a photomask having pin hole defects in a light blocking layer, and light absorption patterns are formed on the backside of the photomask substrate corresponding to a region having pin hole defects by etching the light absorption layer.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: June 7, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Tae Joong Ha, Hee Chun Kim
  • Publication number: 20090098470
    Abstract: Disclosed herein is a method of correcting defects in photomasks. According to one embodiment, a light absorption layer is formed on a photomask where pin hole defects occur in a light blocking layer, and light absorption patterns are formed on the pin hole defect portions by selectively etching the light absorption layer. According to another embodiment, a light absorption layer is formed on a backside of a photomask having pin hole defects in a light blocking layer, and light absorption patterns are formed on the backside of the photomask substrate corresponding to a region having pin hole defects by etching the light absorption layer.
    Type: Application
    Filed: June 27, 2008
    Publication date: April 16, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Tae Joong Ha, Hee Chun Kim