Abstract: A semiconductor device may include a gate structure including insulating layers and conductive layers alternately stacked, a channel layer passing through the gate structure, an insulating core disposed in the channel layer, and a capping layer including a capping pattern disposed in the channel layer and a capping liner disposed between the capping pattern and the insulating core and extending between the channel layer and the capping pattern, wherein the capping liner and the capping pattern may include impurities having different concentrations.

Abstract: The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor device may include a gate structure including insulating layers and conductive layers alternately stacked, a channel layer passing through the gate structure, an insulating core disposed in the channel layer, and a capping layer including a capping pattern disposed in the channel layer and a capping liner disposed between the capping pattern and the insulating core and extending between the channel layer and the capping pattern, wherein the capping liner and the capping pattern may include impurities having different concentrations.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Abstract: Provided are a 3-dimensional non-volatile memory device and a method of fabricating the same. The 3-dimensional non-volatile memory device may include a substrate; semiconductor pillars, which are arranged at a certain interval in a first direction and a second direction different from the first direction; a string isolation film, which is arranged between the semiconductor pillars arranged in the first direction among the semiconductor pillars and extends in the first direction and a third direction vertical to the main surface of the substrate; first sub-electrodes repeatedly stacked on the substrate in the third direction; second sub-electrodes, which are electrically isolated from the first sub-electrodes by the string isolation film, and are repeatedly stacked on the substrate in the third direction; and information storage films including a first information storage film and a second information storage film.

Abstract: Provided are a 3-dimensional non-volatile memory device and a method of fabricating the same. The 3-dimensional non-volatile memory device may include a substrate; semiconductor pillars, which are arranged at a certain interval in a first direction and a second direction different from the first direction; a string isolation film, which is arranged between the semiconductor pillars arranged in the first direction among the semiconductor pillars and extends in the first direction and a third direction vertical to the main surface of the substrate; first sub-electrodes repeatedly stacked on the substrate in the third direction; second sub-electrodes, which are electrically isolated from the first sub-electrodes by the string isolation film, and are repeatedly stacked on the substrate in the third direction; and information storage films including a first information storage film and a second information storage film.

Abstract: An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer which is formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer which is formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.