Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Abstract: Provided are a 3-dimensional non-volatile memory device and a method of fabricating the same. The 3-dimensional non-volatile memory device may include a substrate; semiconductor pillars, which are arranged at a certain interval in a first direction and a second direction different from the first direction; a string isolation film, which is arranged between the semiconductor pillars arranged in the first direction among the semiconductor pillars and extends in the first direction and a third direction vertical to the main surface of the substrate; first sub-electrodes repeatedly stacked on the substrate in the third direction; second sub-electrodes, which are electrically isolated from the first sub-electrodes by the string isolation film, and are repeatedly stacked on the substrate in the third direction; and information storage films including a first information storage film and a second information storage film.

Abstract: Provided are a 3-dimensional non-volatile memory device and a method of fabricating the same. The 3-dimensional non-volatile memory device may include a substrate; semiconductor pillars, which are arranged at a certain interval in a first direction and a second direction different from the first direction; a string isolation film, which is arranged between the semiconductor pillars arranged in the first direction among the semiconductor pillars and extends in the first direction and a third direction vertical to the main surface of the substrate; first sub-electrodes repeatedly stacked on the substrate in the third direction; second sub-electrodes, which are electrically isolated from the first sub-electrodes by the string isolation film, and are repeatedly stacked on the substrate in the third direction; and information storage films including a first information storage film and a second information storage film.

Abstract: An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer which is formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer which is formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.