Patents by Inventor Hee-Don Jung

Hee-Don Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
    Patent number: 10269928
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: April 23, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Hun Hong, Hee-Soo Kang, Hyun-Jo Kim, Sang-Pil Sim, Hee-Don Jung
  • Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
    Patent number: 10002943
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: June 19, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Hun Hong, Hee-Soo Kang, Hyun-Jo Kim, Sang-Pil Sim, Hee-Don Jung
  • SEMICONDUCTOR DEVICES HAVING 3D CHANNELS, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING 3D CHANNELS
    Publication number: 20180019321
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Application
    Filed: September 27, 2017
    Publication date: January 18, 2018
    Inventors: SOO-HUN HONG, HEE-SOO KANG, HYUN-JO KIM, SANG-PIL SIM, HEE-DON JUNG
  • SEMICONDUCTOR DEVICES HAVING 3D CHANNELS, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING 3D CHANNELS
    Publication number: 20160268393
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Application
    Filed: May 25, 2016
    Publication date: September 15, 2016
    Inventors: SOO-HUN HONG, HEE-SOO KANG, HYUN-JO KIM, SANG-PIL SIM, HEE-DON JUNG
  • Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
    Patent number: 9379106
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: June 28, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Hun Hong, Hee-Soo Kang, Hyun-Jo Kim, Sang-Pil Sim, Hee-Don Jung
  • SEMICONDUCTOR DEVICES HAVING 3D CHANNELS, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING 3D CHANNELS
    Publication number: 20150054089
    Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
    Type: Application
    Filed: October 2, 2014
    Publication date: February 26, 2015
    Inventors: SOO-HUN HONG, HEE-SOO KANG, HYUN-JO KIM, SANG-PIL SIM, HEE-DON JUNG
  • Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels
    Patent number: 8878309
    Abstract: A semiconductor device includes a substrate having first, second and third fins longitudinally aligned in a first direction. A first trench extends between the first and second fins, and a second trench extends between the second and third fins. A first portion of field insulating material is disposed in the first trench, and a second portion of field insulating material is disposed in the second trench. An upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins. A first dummy gate is disposed on an upper surface of the first portion of the field insulating material, and a second dummy gate at least partially extends into the second trench to the upper surface of the second portion of the field insulating material.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: November 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Hun Hong, Hee-Soo Kang, Hyun-Jo Kim, Sang-Pil Sim, Hee-Don Jung