Abstract: An electrostatic discharge device and an organic electro-luminescence display device having the same are provided. The organic electro-luminescence display device includes an electrostatic discharge device including a metal pattern having an island shape on a substrate, an insulating layer on the metal pattern, a semiconductor pattern on the insulating layer, the semiconductor pattern corresponding to the metal pattern, a first electrode overlapping one end of the semiconductor pattern, and a second electrode overlapping the other end of the semiconductor pattern, and spaced from the first electrode, thereby preventing a current leakage, a signal distortion and a signal cross-talk to improve the reliability.

Abstract: An organic light emitting display device with improved lifespan is disclosed. The organic light emitting display device includes first and second electrodes facing each other on a substrate, at least two light emitting units formed between the first and second electrodes, an N-type charge generation layer and a P-type charge generation layer sequentially stacked between the light emitting units, and at least one auxiliary charge generation layer formed between at least any one of the P-type charge generation layer and the N-type charge generation layer and an emitting layer of the light emitting unit disposed on an upper or lower portion of the at least any one thereof and generating electrons and holes supplied to the emitting layer of the light emitting unit.

Abstract: An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer throug

Abstract: An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern.

Abstract: An electrostatic discharge device and an organic electro-luminescence display device having the same are provided. The organic electro-luminescence display device includes an electrostatic discharge device including a metal pattern having an island shape on a substrate, an insulating layer on the metal pattern, a semiconductor pattern on the insulating layer, the semiconductor pattern corresponding to the metal pattern, a first electrode overlapping one end of the semiconductor pattern, and a second electrode overlapping the other end of the semiconductor pattern, and spaced from the first electrode, thereby preventing a current leakage, a signal distortion and a signal cross-talk to improve the reliability.

Abstract: A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.

Abstract: An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern.

Abstract: An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.

Abstract: A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

Abstract: A display substrate, an organic light emitting diode display device having the same, and a manufacturing method thereof are disclosed. The display substrate includes a first pixel separating portion and a second pixel separating portion extending from the pixel separating portion and disposed around a pixel portion. Therefore, the number of processes for forming the organic light emitting diode display device can be reduced, and corrosion of a first electrode of the organic light emitting diode display device can be prevented.

Abstract: A thin film transistor fabrication method allows forming a first photoresist pattern on a triple layer of insulation, conductive and metal films opposite to a semiconductor pattern. A first metal pattern and a conductive pattern are formed through an etch process before forming source and drain regions through a first ion injection process. A second photoresist pattern with a narrower width than that of the first photoresist pattern is derived from the first photoresist pattern. The first metal pattern is reformed into a second metal pattern with a narrower width than that of the second photoresist pattern. A process is performed that includes removing the second photoresist pattern, forming LDD (Lightly Doped Drain) regions in the semiconductor pattern, and forming GOLDD (Gate Overlap LDD) regions in the semiconductor pattern. A second insulation film is formed before forming source and drain electrodes on the second insulation film.

Abstract: An OLED device is disclosed. The OLED device includes: a substrate defined into an active area in which a plurality of pixels are formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements are formed, a ground contact area, and a seal line area; a thin film transistor formed in each pixel region within the active area; an organic light emission diode formed on a protective film and configured to include a first electrode, an organic light emission layer and a second electrode; a bank layer formed to divide the organic light emission diode into pixel units; a signal wiring formed in the ground contact area and the seal line area; and an extended portion formed from the same material as the first electrode of the organic light emission diode and configured to cover the signal wiring.

Abstract: An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern.

Abstract: A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first

Abstract: The organic light emitting display device includes an organic light emitting display panel and a data driver, wherein the organic light emitting display panel includes an active region which includes pixel driving TFTs for embodying an image and organic luminescent elements respectively connected with the pixel driving TFTs to emit light, a GIP region which includes a gate driver formed with a plurality of gate driving TFTs for respectively driving gate lines of the active region, a GND region formed between the GIP region and the active region to be formed with a base voltage line for supplying base voltage to the organic luminescent elements of the active region, and a sealant region formed with a sealant for attaching an upper substrate to a lower substrate, and wherein the GND region includes out-gassing blocking holes.

Abstract: An array substrate for an organic electroluminescent device includes a substrate; first and second gate electrodes; first and second gate insulating layers; first and second active layers; an interlayer insulating layer; first to fourth ohmic contact layers; first and second source electrodes; first and second drain electrodes; a data line connected to the first source electrode; a first power line connected to the second source electrode; a first passivation layer on the first and second source electrodes; a gate line contacting the first gate electrode; a second passivation layer on the gate line; a pixel electrode on the second passivation layer and contacting the second drain electrode; an organic luminescent layer on the pixel electrode; and a reference electrode on the organic luminescent layer, wherein portions of the pixel electrodes respectively contacting the organic luminescent layers in one pixel region and in another one pixel region have different heights from the substrate.

Abstract: Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the dr

Abstract: An array substrate for a display device includes a gate electrode on a substrate; a gate insulating layer on the gate electrode and having the same plane area and the same plane shape as the gate electrode; an active layer on the gate insulating layer and exposing an edge of the gate insulating layer; an interlayer insulating layer on the active layer and including first and second active contact holes, the first and second active contact holes respectively exposing both sides of the active layers; first and second ohmic contact layers contacting the active layer through the first and second active contact holes, respectively; a source electrode on the first ohmic contact layer; a drain electrode on the second ohmic contact layer; a data line on the interlayer insulating layer and connected to the source electrode; a first passivation layer on the source electrode, the drain electrode and the data line, the first passivation layer, the interlayer insulating layer and the gate insulating layer have a first gat

Abstract: A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.

Abstract: A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer including an opening, wherein the opening corresponds to the etch-stopper such that the opening is divided into first and second semiconductor contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact layers, a source electrode, a drain electrode and a data line, the first and second ohmic contact layers respectively contacting both sides of the active layer through the first and second semiconductor contact holes; removing an exposed portion of the etch-stopper; and forming a pixel electrode contacting the drain electrode.