Abstract: The present invention relates to a fault diagnosis for a photovoltaic system. A fault diagnosis apparatus includes a temperature sensor unit measuring both an internal temperature value of the junction box and a surface temperature value of the solar module; a voltage sensor provided in the junction box; and an operation unit determining where a fault occurs among the solar module, an inside of the junction box, and the inverter by comparing measured values of the temperature sensor unit with a measured value of the voltage sensor. According to the present invention, initial investment cost is inexpensive. In addition, it is possible to detect solar module faults that are difficult to be checked by the naked eye.

Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Abstract: The present invention relates to a fault diagnosis for a photovoltaic system. A fault diagnosis apparatus includes a temperature sensor unit measuring both an internal temperature value of the junction box and a surface temperature value of the solar module; a voltage sensor provided in the junction box; and an operation unit determining where a fault occurs among the solar module, an inside of the junction box, and the inverter by comparing measured values of the temperature sensor unit with a measured value of the voltage sensor. According to the present invention, initial investment cost is inexpensive. In addition, it is possible to detect solar module faults that are difficult to be checked by the naked eye.

Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.