Patents by Inventor Hee-Geun Jeong

Hee-Geun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200251509
    Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
    Type: Application
    Filed: April 23, 2020
    Publication date: August 6, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han-seok KIM, Byung-jun PARK, Hee-geun JEONG, Seung-joo NAH
  • Patent number: 10644053
    Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: May 5, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-seok Kim, Byung-jun Park, Hee-geun Jeong, Seung-joo Nah
  • Publication number: 20200075643
    Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 5, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dae-han HAN, Sun-hyun KIM, Han-seok KIM, Chung-ho SONG, Gyeong-hee LEE, Hee-geun JEONG
  • Publication number: 20190267413
    Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
    Type: Application
    Filed: May 9, 2019
    Publication date: August 29, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han-seok KIM, Byung-jun PARK, Hee-geun JEONG, Seung-joo NAH
  • Patent number: 10304887
    Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: May 28, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-seok Kim, Byung-jun Park, Hee-geun Jeong, Seung-joo Nah
  • Patent number: 10096637
    Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: October 9, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Chung, Tae Hun Lee, Hee Geun Jeong
  • Publication number: 20180286896
    Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
    Type: Application
    Filed: January 4, 2018
    Publication date: October 4, 2018
    Inventors: Han-seok KIM, Byung-jun PARK, Hee-geun JEONG, Seung-joo NAH
  • Patent number: 9806113
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 31, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
  • Publication number: 20170229500
    Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 10, 2017
    Inventors: Jun Suk LEE, Jung Chak AHN, Hee Geun JEONG, Kyung Ho LEE
  • Publication number: 20170207264
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Application
    Filed: April 3, 2017
    Publication date: July 20, 2017
    Inventors: Young-Sun OH, Kyung-Ho LEE, Jung-Chak AHN, Hee-Geun JEONG
  • Publication number: 20170179170
    Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
    Type: Application
    Filed: March 2, 2017
    Publication date: June 22, 2017
    Inventors: YOUNG WOO CHUNG, TAE HUN LEE, HEE GEUN JEONG
  • Patent number: 9666616
    Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: May 30, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Suk Lee, Jung Chak Ahn, Hee Geun Jeong, Kyung Ho Lee
  • Patent number: 9647016
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: May 9, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
  • Patent number: 9620546
    Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: April 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Chung, Tae Hun Lee, Hee Geun Jeong
  • Patent number: 9608024
    Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Wook Lee, Yi Tae Kim, Jong Eun Park, Jung Chak Ahn, Kyung Ho Lee, Tae Hun Lee, Hee Geun Jeong
  • Patent number: 9543349
    Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: January 10, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Hee-Geun Jeong
  • Patent number: 9420209
    Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: August 16, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Chak Ahn, Hee Geun Jeong
  • Patent number: 9385157
    Abstract: A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the semiconductor substrate, the floating diffusion region being spaced apart from the photoelectric conversion region, a vertical transfer gate extending from a first surface of the semiconductor substrate into a recess in the semiconductor substrate, and configured to form a transfer channel between the photoelectric conversion region and the floating diffusion region, and an impurity region surrounding the recess. The impurity region has a first impurity concentration at a region adjacent to a side of the recess, and a second impurity concentration higher than the first impurity concentration at a region adjacent to the bottom of the recess.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: July 5, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Woo Jung, Jung-Chak Ahn, Hee-Geun Jeong
  • Publication number: 20160099267
    Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Wook LEE, Yi Tae KIM, Jong Eun PARK, Jung Chak AHN, Kyung Ho LEE, Tae Hun LEE, Hee Geun JEONG
  • Publication number: 20160086985
    Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
    Type: Application
    Filed: September 17, 2015
    Publication date: March 24, 2016
    Inventors: YOUNG WOO CHUNG, TAE HUN LEE, HEE GEUN JEONG