Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A semiconductor device can include a first ferroelectric random access memory to which a first voltage is applied and a second ferroelectric random access memory to which a second voltage is applied, where the second voltage is lower than the first voltage. A data protection circuit can determine whether test data is normally read from the second ferroelectric random access memory or whether a write-back operation is normally performed on the second ferroelectric random access memory on the basis of the second voltage. The data protection circuit can also generate a read prevention control signal to control whether a read operation is to be performed on the first ferroelectric random access memory based on the determined result.

Abstract: A semiconductor device can include a first ferroelectric random access memory to which a first voltage is applied and a second ferroelectric random access memory to which a second voltage is applied, where the second voltage is lower than the first voltage. A data protection circuit can determine whether test data is normally read from the second ferroelectric random access memory or whether a write-back operation is normally performed on the second ferroelectric random access memory on the basis of the second voltage. The data protection circuit can also generate a read prevention control signal to control whether a read operation is to be performed on the first ferroelectric random access memory based on the determined result.

Abstract: A method of operating a ferroelectric random access memory (FRAM) can include reading a low-voltage FRAM monitoring memory array and preventing a read/write-back of an FRAM memory cell array if data read from the low-voltage FRAM monitoring memory array is corrupted.

Abstract: A method of operating a ferroelectric random access memory (FRAM) can include reading a low-voltage FRAM monitoring memory array and preventing a read/write-back of an FRAM memory cell array if data read from the low-voltage FRAM monitoring memory array is corrupted.