Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.

Abstract: An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.

Abstract: A semiconductor manufacturing apparatus includes a chamber main body and a dome to form an accommodating space to accommodate a substrate, an antenna provided on the dome to generate a plasma in the accommodating space, and a temperature controller provided on the dome to control a temperature of the dome. The temperature controller includes a heat transfer unit provided on the dome or in the vicinity of the dome and the antenna, a heater provided on the heat transfer unit to heat the dome, a cooler provided between the heat transfer unit and the heater to cool the dome, and an adjusting valve connected to the cooler to adjust the quantity of coolant supplied to the cooler to control the temperature of the dome within a predetermined reference temperature range. The temperature of the dome may be maintained constant within the predetermined reference temperature range if an electrical power with a high voltage is supplied to the antennato generate the plasma with a high density in the chamber.

Abstract: A process control method managing a semiconductor device manufacturing process, including an operation of a system with a plurality of sub-modules, including diagnosing an operational state of the plurality of sub-modules prior to beginning the semiconductor device manufacturing process, checking a process condition of the system, and informing operational states of the sub-modules and the process condition of the system to a user. With this configuration, a system for making semiconductor devices and processing control thereof prevents a malfunction of the semiconductor device manufacturing system according to a diagnosis of the semiconductor device manufacturing system prior to starting a semiconductor manufacturing process, thereby increasing yield in manufacturing semiconductor devices.