Patents by Inventor Hee Jeong Son
Hee Jeong Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11158626Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection unit and a second voltage protection unit. The first voltage protection unit may be connected with the pad. The first voltage protection unit may be configured to maintain a turn-off state when a test voltage having a negative level may be applied from the pad. The second voltage protection unit may be connected between the first voltage protection unit and a ground terminal. The second voltage protection unit may be turned-on when an electrostatic voltage having a positive level may be applied from the pad. The second voltage protection unit may include a plurality of gate positive p-channel metal oxide semiconductor (GPPMOS) transistors serially connected with each other.Type: GrantFiled: January 19, 2018Date of Patent: October 26, 2021Assignee: SK hynix Inc.Inventors: Chang Hwi Lee, Hee Jeong Son, Ki Ryong Jung, Seung Yeop Lee
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Patent number: 10387935Abstract: A shopping information providing system that receives first product information selected by a first user from among a plurality of pieces of product information included in at least one piece of category information selected by the first user; searches for second users who selected at least one piece of information from the first product information and searches for second product information as one or more pieces of product information selected by the second user from among a plurality of pieces of product information included in at least one piece of category information selected by the second user; sets second users who selected more than a predetermined number of third product information commonly selected by the first and second users as interest friends of the first user; and provides information from among the one or more pieces of the third product information, fourth product information, and fifth product information.Type: GrantFiled: January 19, 2016Date of Patent: August 20, 2019Assignee: NAVER CorporationInventors: Eun Ji Oh, Hee Jeong Son
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Publication number: 20180350797Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection unit and a second voltage protection unit. The first voltage protection unit may be connected with the pad. The first voltage protection unit may be configured to maintain a turn-off state when a test voltage having a negative level may be applied from the pad. The second voltage protection unit may be connected between the first voltage protection unit and a ground terminal. The second voltage protection unit may be turned-on when an electrostatic voltage having a positive level may be applied from the pad. The second voltage protection unit may include a plurality of gate positive p-channel metal oxide semiconductor (GPPMOS) transistors serially connected with each other.Type: ApplicationFiled: January 19, 2018Publication date: December 6, 2018Inventors: Chang Hwi LEE, Hee Jeong SON, Ki Ryong JUNG, Seung Yeop LEE
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Publication number: 20160210677Abstract: A shopping information providing system that receives first product information selected by a first user from among a plurality of pieces of product information included in at least one piece of category information selected by the first user; searches for second users who selected at least one piece of information from the first product information and searches for second product information as one or more pieces of product information selected by the second user from among a plurality of pieces of product information included in at least one piece of category information selected by the second user; sets second users who selected more than a predetermined number of third product information commonly selected by the first and second users as interest friends of the first user; and provides information from among the one or more pieces of the third product information, fourth product information, and fifth product information.Type: ApplicationFiled: January 19, 2016Publication date: July 21, 2016Inventors: Eun Ji Oh, Hee Jeong Son
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Patent number: 8345395Abstract: The present invention describes an electrostatic discharge protection circuit that protects an internal circuit of a semiconductor device from electrostatic discharge. The electrostatic discharge protection circuit includes a first electrostatic protection unit that transfers static electricity as a driving signal and also discharges the static electricity to a first discharge line when the static electricity is generated in a pad. It also includes a second electrostatic protection unit that discharges the static electricity generated in the pad to a second discharge line in response to the driving signal transferred from the first electrostatic protection unit. Since the first electrostatic protection unit performs an electrostatic discharge operation and at the same time aids the driving of the second electrostatic protection unit, electrostatic discharge performance can be enhanced while a layout area of the electrostatic discharge protection circuit can be reduced.Type: GrantFiled: May 6, 2011Date of Patent: January 1, 2013Assignee: Hynix Semiconductor Inc.Inventor: Hee Jeong Son
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Patent number: 8247872Abstract: Provided is an electrostatic discharge (ESD) protection circuit including a multi-finger transistor. The multi-finger transistor includes a plurality of drains and a plurality of sources alternately arranged in parallel, and a plurality of gate electrodes arranged between the drains and the sources. The drains are electrically coupled to an input/output pad through a plurality of first finger patterns which are coupled to a plurality of first contact patterns. The sources are electrically coupled to a specific voltage line through a path which comprises a plurality of second finger patterns coupled to a plurality of second contact patterns. The number of the first contact patterns corresponding to the drains is gradually reduced as the distance to the voltage line becomes shorter.Type: GrantFiled: December 14, 2009Date of Patent: August 21, 2012Assignee: Hynix Semiconductor Inc.Inventor: Hee-Jeong Son
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Publication number: 20110211291Abstract: The present invention describes an electrostatic discharge protection circuit that protects an internal circuit of a semiconductor device from electrostatic discharge. The electrostatic discharge protection circuit includes a first electrostatic protection unit that transfers static electricity as a driving signal and also discharges the static electricity to a first discharge line when the static electricity is generated in a pad. It also includes a second electrostatic protection unit that discharges the static electricity generated in the pad to a second discharge line in response to the driving signal transferred from the first electrostatic protection unit. Since the first electrostatic protection unit performs an electrostatic discharge operation and at the same time aids the driving of the second electrostatic protection unit, electrostatic discharge performance can be enhanced while a layout area of the electrostatic discharge protection circuit can be reduced.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Hee Jeong SON
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Patent number: 7876541Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.Type: GrantFiled: November 3, 2009Date of Patent: January 25, 2011Assignee: Hynix Semiconductor Inc.Inventors: Jung Eon Moon, Dae Gwan Kang, Kook Whee Kwak, Nak Heon Choi, Si Woo Lee, Hee Jeong Son, Yun Suk, Seong Hoon Jeong, Joon Won Lee
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Publication number: 20100165523Abstract: An integrated circuit includes: a pad configured to receive an external signal; an electrostatic discharge (ESD) protector coupled with the pad to provide an ESD path to a power source voltage line and a ground voltage line; an input buffer configured to receive the signal applied to the pad through an input terminal; and a PMOS transistor coupled between the input terminal of the input buffer and the ground voltage line, with a gate terminal coupled with the power source voltage line.Type: ApplicationFiled: December 17, 2009Publication date: July 1, 2010Inventor: Hee-Jeong SON
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Publication number: 20100149705Abstract: Provided is an electrostatic discharge (ESD) protection circuit including a multi-finger transistor. The multi-finger transistor includes a plurality of drains and a plurality of sources alternately arranged in parallel, and a plurality of gate electrodes arranged between the drains and the sources. The drains are electrically coupled to an input/output pad through a plurality of first finger patterns which are coupled to a plurality of first contact patterns. The sources are electrically coupled to a specific voltage line through a path which comprises a plurality of second finger patterns coupled to a plurality of second contact patterns. The number of the first contact patterns corresponding to the drains is gradually reduced as the distance to the voltage line becomes shorter.Type: ApplicationFiled: December 14, 2009Publication date: June 17, 2010Inventor: Hee-Jeong Son
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Publication number: 20100046131Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.Type: ApplicationFiled: November 3, 2009Publication date: February 25, 2010Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Jung Eon Moon, Dae Gwan Kang, Kook Whee Kwak, Nak Heon Choi, Si Woo Lee, Hee Jeong Son, Yun Suk, Seong Hoon Jeong, Joon Won Lee
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Patent number: 7616415Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.Type: GrantFiled: April 13, 2007Date of Patent: November 10, 2009Assignee: Hynix Semiconductor Inc.Inventors: Jung Eon Moon, Dae Gwan Kang, Kook Whee Kwak, Nak Heon Choi, Si Woo Lee, Hee Jeong Son, Suk Yun, Seong Hoon Jeong, Joon Won Lee
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Publication number: 20080198517Abstract: The present invention describes an electrostatic discharge protection circuit that protects an internal circuit of a semiconductor device from electrostatic discharge. The electrostatic discharge protection circuit includes a first electrostatic protection unit that transfers static electricity as a driving signal and also discharges the static electricity to a first discharge line when the static electricity is generated in a pad. It also includes a second electrostatic protection unit that discharges the static electricity generated in the pad to a second discharge line in response to the driving signal transferred from the first electrostatic protection unit. Since the first electrostatic protection unit performs an electrostatic discharge operation and at the same time aids the driving of the second electrostatic protection unit, electrostatic discharge performance can be enhanced while a layout area of the electrostatic discharge protection circuit can be reduced.Type: ApplicationFiled: February 14, 2008Publication date: August 21, 2008Inventor: Hee Jeong Son
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Publication number: 20070242401Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.Type: ApplicationFiled: April 13, 2007Publication date: October 18, 2007Inventors: Jung Eon MOON, Dae Gwan KANG, Kook Whee KWAK, Nak Heon CHOI, Si Woo LEE, Hee Jeong SON, Suk YUN, Seong Hoon JEONG, Joon Won LEE