Abstract: Provided is an instrument for surgery and, more specifically, to an instrument for surgery which can be manually operated in order to be used for laparoscopic surgery or various types of surgery.

Abstract: The present disclosure provides a novel biphenyl derivative compound or a pharmaceutically acceptable salt thereof. The biphenyl derivative compound or pharmaceutically acceptable salt thereof according to the present disclosure is a compound that increases Nm23-H1/NDPK activity and can inhibit cancer metastasis and growth. Thus, it exhibits excellent effects not only on the prevention, alleviation and treatment of cancer, but also on the suppression of cancer metastasis.

Abstract: Provided is a peptide composition for preventing or treating Alzheimer's dementia. A peptide or a salt substituent thereof according to the presently claimed subject matter exhibits effects such as suppression of LPS-mediated cytokine production, suppression of LPS-induced neuroinflammation, amelioration of cognitive impairment, suppression of beta amyloid or tau protein aggregation, and suppression of neuronal loss. The polypeptide or the salt substituent thereof can permeate the blood-brain barrier, and thus, is expected to be usefully used for preventing or treating Alzheimer's dementia.

Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: Proposed is an all-solid-state battery including a self-standing sheet layer positioned on a negative electrode current collector. The all-solid-state battery may include the negative electrode current collector, the self-standing sheet layer positioned on the negative electrode current collector, a solid electrolyte layer positioned on the sheet layer, a positive electrode active material layer positioned on the solid electrolyte layer, and a positive electrode current collector positioned on the positive electrode active material layer. The sheet layer contains carbon nanotubes.

Abstract: A stereoscopic display device including a barrier panel is provided. When a viewing distance of a viewer is out of the proper range, the stereoscopic display device may shift the blocking regions and the transmitting regions of the barrier panel. The stereoscopic display device may maintain the ratio of channels located within a barrier blocking region and a barrier transmitting region of the barrier panel by using the channels disposed within trigger regions of the barrier panel. Thus, the stereoscopic display device may provide a stereoscopic image of good quality to the viewer located at a region being out of the proper range.

Abstract: A memory device and a method of operating the same are provided. The memory device may include a peripheral circuit configured to perform a plurality of program loops and program a page selected from among the plurality of pages, wherein the peripheral circuit may count a number of memory cells whose threshold voltages have increased up to a first target voltage, among a part of memory cells included in the selected page, and may perform a current sensing check operation of determining whether a verify operation performed in a previous program loop has passed or failed, and a control logic circuit configured to control the peripheral circuit so that the current sensing check operation is performed when the number of memory cells whose threshold voltages have increased up to the first target voltage, is equal to or greater than a reference number of memory cells.

Abstract: A semiconductor memory device, and a method of operation, include: a memory block coupled with a plurality of word lines and a plurality of bit lines; a peripheral circuit configured to perform a program operation and a read operation on the memory block; and control logic configured to control the peripheral circuit such that a word line overdrive period overlaps with a bit line overdrive period in a bit line precharge operation during at least one of the program operation and the read operation.

Abstract: A memory device and a method of operating the same are provided. The memory device may include a peripheral circuit configured to perform a plurality of program loops and program a page selected from among the plurality of pages, wherein the peripheral circuit may count a number of memory cells whose threshold voltages have increased up to a first target voltage, among a part of memory cells included in the selected page, and may perform a current sensing check operation of determining whether a verify operation performed in a previous program loop has passed or failed, and a control logic circuit configured to control the peripheral circuit so that the current sensing check operation is performed when the number of memory cells whose threshold voltages have increased up to the first target voltage, is equal to or greater than a reference number of memory cells.

Abstract: A memory device includes drain select lines, source select lines, a plurality of word lines arranged between the drain select lines and the source select lines, and a peripheral circuit configured to perform a program operation on selected memory cells connected to a selected word line among the plurality of word lines. The peripheral circuit includes a voltage generator configured to generate a voltage for initializing a channel of a plurality of memory cells respectively connected to the plurality of word lines in a program phase among a plurality of phases included in the program operation.

Abstract: An electronic device includes drain select lines, source select lines, a plurality of word lines arranged between the drain select lines and the source select lines, and a peripheral circuit configured to perform a program operation on selected memory cells connected to a selected word line among the plurality of word lines. The peripheral circuit includes a voltage generator configured to generate a voltage for initializing a channel of a plurality of memory cells respectively connected to the plurality of word lines in a program phase among a plurality of phases included in the program operation.

Abstract: A semiconductor memory device, and a method of operation, include: a memory block coupled with a plurality of word lines and a plurality of bit lines; a peripheral circuit configured to perform a program operation and a read operation on the memory block; and control logic configured to control the peripheral circuit such that a word line overdrive period overlaps with a bit line overdrive period in a bit line precharge operation during at least one of the program operation and the read operation.