Abstract: Provided is a barrier film and a manufacturing method thereof. The barrier film has a structure comprising a polysilazane barrier layer, which can exhibit excellent running properties in a so-called roll-to-roll process or the like, and can maintain or improve the performance of the barrier layer even during an unwinding and/or winding process, and the like.

Abstract: Provided is a light-diffusing barrier film. The film is an integral film comprising a barrier layer, a base layer and a light-diffusing layer, sequentially. The film can prevent moisture penetration into a device such as an organic light emitting device, and also imparts a light-diffusing function to the device. In particular, the film can have excellent moisture blocking properties even after a roll-to-roll process.

Abstract: Provided is a barrier film that includes a base layer (A), and a barrier layer (B) located on one side of the base layer and including one or more cured layers of polysilazane layers having a surface (S) of a concavo-convex structure formed by protruding particles, the barrier film having excellent barrier properties against the external environment, and excellent optical properties. The barrier film can be used for an electronic product sensitive to moisture.

Abstract: Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Abstract: Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10?3 g/m2·day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Abstract: Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10?4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

Abstract: Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

Abstract: Provided is a barrier film that includes a base layer (A), and a barrier layer (B) located on one side of the base layer and including one or more cured layers of polysilazane layers having a surface (S) of a concavo-convex structure formed by protruding particles, the barrier film having excellent barrier properties against the external environment, and excellent optical properties. The barrier film can be used for an electronic product sensitive to moisture etc.

Abstract: Provided is a light-diffusing barrier film. The film is an integral film comprising a barrier layer, a base layer and a light-diffusing layer, sequentially. The film can prevent moisture penetration into a device such as an organic light emitting device, and also imparts a light-diffusing function to the device. In particular, the film can have excellent moisture blocking properties even after a roll-to-roll process.

Abstract: The present application provides a barrier film and a method for manufacturing same. The barrier film, as a structure including a polysilazane barrier layer, may exhibit excellent running properties in a so-called roll-to-roll process, and the performance of the barrier layer may be maintained or improved even during a unwinding and/or winding process.