Patents by Inventor Hee K. Cheon

Hee K. Cheon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device
    Patent number: 5212119
    Abstract: A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer.
    Type: Grant
    Filed: November 26, 1991
    Date of Patent: May 18, 1993
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Hyung C. Hah, Jung T. Kim, Yong K. Baek, Hee K. Cheon