Abstract: The present invention relates to a plasma reactor for manufacturing electronic components which includes a reactor having a plasma generation region therein, and gas injection for injecting a reaction gas into the reactor. In the plasma reactor, a magnetic coil array unit is formed along an outer circumferential surface of the reactor, and a plurality of support members on which a coil is wound are installed along an outer circumferential surface of the reactor. A coil is wound onto each support member by a certain number of windings, and each magnetic coil is connected in series to each other in such a manner that the coils connected to neighboring support members have opposite polarities. The gas injector includes a gas spraying plate through which a gas is injected, and a separate gas spraying port formed in the gas spraying plate so that a main reaction gas and a mixing gas are sprayed along different paths.

Abstract: A method for fabricating a semiconductor device wherein a plasma reaction is used to dry etch a film, comprising injection of anions onto the film to neutralize cations remaining on the film after the plasma etch, whereby the reliability in highly integrated semiconductor devices can be secured.

Abstract: The invention provides a method for repairing a defect-generated cell using a laser for disconnecting a defect-generated portion of a fuse conductive line in the fabricating process of semiconductor integrated circuits, characterized in that an insulation layer on the fuse conductive line is isotropically etched partially to a predetermined thickness for the purpose of refracting laser beam incident to the defect-generated portion of the fuse conductive line.

Abstract: In the formation of a contact hole within highly limited area, the size of the contact hole does not vary. For achieving such purpose, after a first polysilicon pattern is formed, a concave portion is formed by isotropically etching the predetermined depth of an insulating layer. A second polysilicon spacer is then formed at the sidewall of the first polysilicon pattern and the concave portion. Using the etching process employing the first polysilicon pattern and the second polysilicon spacer as a mask, the contact hole is formed by etching the insulating layer.