Abstract: The present invention is related to a metal organic chemical vapor deposition apparatus, which is equipped with multiple numbers of n-type doping satellite chambers and a p-type doping satellite chamber in addition to a main growth chamber, and methods for minimizing the contamination of the epitaxial layers by residual doping reactants and maximizing the productivity of wafers. The separate n-type doping, p-type doping, and main growth chambers minimize the contamination of the growing epitaxial layer by the reactants used for doping the layer in the previous growth steps and deposited inside of the chamber. The multiple n-type doping satellite chambers make it possible to schedule the start of growth in each chamber in a way that the growth finishes at a regular time interval so that the wafers can be transferred to the main chamber at a regular time interval.