Abstract: There is provided a composition for forming a heat shrinkable film capable of providing a heat shrinkable film capable of having an excellent shrinkage rate and being heat-shrunk at a low temperature. The composition for forming a heat shrinkable film includes a polyethylene terephthalate (PET) resin having an inherent viscosity of 0.50 to 1.2 dl/g; and a polyester based copolymer including a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate represented by the following Chemical Formula 1 and a residue derived from 4,4-(oxybis(methylene)bis)cyclohexane methanol represented by the following Chemical Formula 2.

Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: There are provided a polyester based copolymer resin capable of having an excellent shrinkage rate and being heat-shrunk at a low temperature, and a molded product comprising the same. The polyester based copolymer resin includes a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid; and a diol-derived residue including a predetermined residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate and a predetermined residue derived from 4,4-(oxybis(methylene)bis)cyclohexane methanol.

Abstract: A semiconductor device includes an active region defined on a substrate, a gate electrode disposed on the active region and covering two adjacent corners of the active region, a drain area formed in the active region adjacent to a first side of the gate electrode, and a source area formed in the active region adjacent to a second side of the gate electrode. The first and second sides of the gate electrode are spaced apart from each other, and the first side has a bent shape.

Abstract: A thin film transistor includes a semiconductor which is disposed on a substrate and includes a source region, a drain region and a channel region, a gate insulating layer disposed on the semiconductor, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, contact holes defined in the interlayer insulating layer, the contact holes respectively exposing the source region and the drain region of the semiconductor, and a source electrode and a drain electrode which are disposed on the interlayer insulating layer and respectively contact the source region and the drain region through the contact holes, where at least one of the contact holes exposing the source region and the drain region obliquely traverses the semiconductor.

Abstract: A semiconductor device is provided. A cell region is disposed in a substrate. The cell region includes a memory cell. A peripheral region is disposed in the substrate. The peripheral region is adjacent to the cell region. The peripheral region has a trench isolation, a first active region and a second active region. The trench isolation is interposed between the first active region and the second active region. A common gate pattern is disposed on the peripheral region. The common gate pattern extends in a first direction and partially overlaps the first active region, the second active region and the trench isolation. A buried conductive pattern is enclosed by the trench isolation. The buried conductive pattern extends in a second direction crossing the first direction. A top surface of the buried conductive pattern is lower than a bottom surface of the common gate pattern.

Abstract: A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Abstract: Disclosed are compounds of Formula G1 (structurally represented): where “RG3” “Rd1” to “Rd4”, “n”, “m”, “p”, “W”, “X”, “Y”, and “Z” are defined herein which compounds are antagonists of A2A receptor. Disclosed herein also are uses of the compounds described herein as antagonists of the A2a receptor in the potential treatment or prevention of neurological disorders and diseases in which A2A receptors are involved. Disclosed herein also are pharmaceutical compositions comprising these compounds and uses of these pharmaceutical compositions.

Abstract: A thin film transistor includes a semiconductor which is disposed on a substrate and includes a source region, a drain region and a channel region, a gate insulating layer disposed on the semiconductor, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, contact holes defined in the interlayer insulating layer, the contact holes respectively exposing the source region and the drain region of the semiconductor, and a source electrode and a drain electrode which are disposed on the interlayer insulating layer and respectively contact the source region and the drain region through the contact holes, where at least one of the contact holes exposing the source region and the drain region obliquely traverses the semiconductor.

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one carrier barrier layer in the substrate and under the gate trenches.

Abstract: A method of forming a capacitor structure includes forming a mold layer on a substrate, in which the substrate includes a plurality of plugs therein, partially removing the mold layer to form a plurality of openings, in which the plugs are exposed by the openings, forming a plurality of lower electrodes filling the openings, in which the lower electrodes have a pillar shape, removing an upper portion of the mold layer to expose upper portions of the lower electrodes, forming a supporting pattern on exposed upper sidewalls of the lower electrodes and on the mold layer, removing the mold layer, and sequentially forming a dielectric layer and an upper electrode on the lower electrodes and the supporting pattern.

Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract: An electron-donating polymer may include a repeating unit A including a repeating unit according to Chemical Formula 3 and at least one selected from a repeating unit according to Chemical Formula 1, a repeating unit according to Chemical Formula 2, and a combination thereof, and a repeating unit B including a repeating unit according to Chemical Formula 4 and a repeating unit according to Chemical Formula 5.

Abstract: An apparatus and method for automatically mixing a phosphor are provided, which are capable of automatically supplying accurate quantities of a phosphor and silicon to a mixing container using a phosphor supply unit and a silicon supply unit.

Abstract: An apparatus and a method for managing an application of an electronic device are provided. A method of operating a first electronic device includes, when an update is detected regarding an application provided to at least one second electronic device, generating an update notice including target information for the application to be updated; transmitting the generated update notice to the second electronic device; and transmitting update data of the application to a second electronic device that has responded to the update notice. A method of operating a second electronic device includes receiving an update notice including target information representing an update object from a first electronic device; determining an application that needs an update operation among already installed applications in the second electronic device based on the target information of the received update notice; and receiving update data from the first electronic device so that the determined application is updated.

Abstract: A cannula includes at least one opening at a distal tip, and further includes multiple fenestrations that are maintainable in position substantially immediately or slightly beyond a site or point of cannula entry into a vessel. The fenestrations, in combination with the opening(s) at the cannula's distal tip, enable the simultaneous perfusion of blood into the cannulated vessel along multiple directions, including opposing or anti-parallel blood flow directions relative to a central axis of the cannulated vessel. During a medical procedure (e.g., an extra-corporeal membrane oxygenation (ECMO) procedure) blood introduced into a vessel such as the femoral artery by way of the cannula can thus exit the cannula in a manner that provides concurrent blood flow in a first direction towards the heart and a second direction away from the heart.

Abstract: There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.

Abstract: A polygon mirror assembly, a light scanning unit employing the polygon mirror assembly, and an image forming apparatus. The polygon mirror assembly includes a polygon mirror formed of a plastic material and having a plurality of reflection surfaces; and a motor unit to support and rotate the polygon mirror, where the polygon mirror is coupled to the motor unit by using an adhesive material.