Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

Abstract: A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.

Abstract: A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.

Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.